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K4F640412D PDF预览

K4F640412D

更新时间: 2022-11-26 22:18:33
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
20页 370K
描述
16M x 4bit CMOS Dynamic RAM with Fast Page Mode

K4F640412D 数据手册

 浏览型号K4F640412D的Datasheet PDF文件第1页浏览型号K4F640412D的Datasheet PDF文件第2页浏览型号K4F640412D的Datasheet PDF文件第4页浏览型号K4F640412D的Datasheet PDF文件第5页浏览型号K4F640412D的Datasheet PDF文件第6页浏览型号K4F640412D的Datasheet PDF文件第7页 
K4F660412D,K4F640412D  
CMOS DRAM  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
VIN,VOUT  
VCC  
Rating  
-0.5 to +4.6  
-0.5 to +4.6  
-55 to +150  
1
Units  
V
Voltage on any pin relative to VSS  
Voltage on VCC supply relative to VSS  
Storage Temperature  
V
Tstg  
°C  
W
Power Dissipation  
PD  
Short Circuit Output Current  
IOS Address  
50  
mA  
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to  
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended  
periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)  
Parameter  
Supply Voltage  
Symbol  
VCC  
VSS  
Min  
3.0  
0
Typ  
Max  
3.6  
0
Units  
3.3  
V
V
V
V
Ground  
0
-
*1  
Input High Voltage  
Input Low Voltage  
VIH  
2.0  
Vcc+0.3  
0.8  
*2  
VIL  
-
-0.3  
*1 : Vcc+1.3V at pulse width£15ns which is measured at VCC  
*2 : -1.3 at pulse width£15ns which is measured at VSS  
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)  
Parameter  
Symbol  
Min  
Max  
Units  
Input Leakage Current (Any input 0£VIN£VCC+0.3V,  
all other pins not under test=0 Volt)  
II(L)  
-5  
5
uA  
Output Leakage Current  
(Data out is disabled, 0V£VOUT£VCC)  
IO(L)  
-5  
5
uA  
Output High Voltage Level(IOH=-2mA)  
Output Low Voltage Level(IOL=2mA)  
VOH  
VOL  
2.4  
-
-
V
V
0.4  

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