Datasheet > K4F640412D

K4F640412D

更新时间： 2022-11-26 22:18:33

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
20页	370K
描述
16M x 4bit CMOS Dynamic RAM with Fast Page Mode

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K4F640412D 数据手册

K4F660412D,K4F640412D

CMOS DRAM

DC AND OPERATING CHARACTERISTICS (Continued)

Max

Symbol

Power

Speed

Units

K4F660412D

K4F640412D

-45

-50

-60

120

110

100

ICC1

ICC2

ICC3

Don¢t care

Normal

Don¢t care

-45

-50

-60

120

110

100

Don¢t care

-45

-50

-60

ICC4

ICC5

ICC6

Normal

0.5

200

0.5

200

Don¢t care

-45

-50

-60

120

110

100

120

110

100

Don¢t care

ICC7

ICCS

Don¢t care

350

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V,

W, OE=VIH, Address=Don¢t care, DQ=Open, TRC=31.25us

ICCS : Self Refresh Current

RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC.

1 2 345 6 7...20

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