Datasheet > K4F640412D

K4F640412D

更新时间： 2022-11-26 22:18:33

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
20页	370K
描述
16M x 4bit CMOS Dynamic RAM with Fast Page Mode

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数据手册

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K4F640412D 数据手册

K4F660412D,K4F640412D

TEST MODE CYCLE

Parameter

CMOS DRAM

( Note 11 )

-45

-50

-60

Symbol

Units

Note

Min

Max

Min

Max

Min

115

160

Max

Random read or write cycle time

Read-modify-write cycle time

Access time from RAS

tRC

120

138

tRWC

tRAC

tCAC

tAA

3,4,10,12

3,4,5,12

3,10,12

Access time from CAS

Access time from column address

RAS pulse width

10K

tRAS

tCAS

tRSH

tCSH

tRAL

tCWD

tRWD

tAWD

tPC

CAS pulse width

RAS hold time

CAS hold time

Column Address to RAS lead time

CAS to W delay time

RAS to W delay time

Column Address to W delay time

Fast Page mode cycle time

Fast Page mode read-modify-write cycle time

RAS pulse width (Fast Page cycle)

Access time from CAS precharge

OE access time

tPRWC

tRASP

tCPA

tOEA

tOED

tOEH

200K

OE to data delay

OE command hold time

1...4 5 678 9 10...20

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