Datasheet > K4E661611D

K4E661611D

更新时间： 2022-11-26 15:26:06

品牌	Logo	应用领域
三星 - SAMSUNG		存储
页数	文件大小	规格书
36页	884K
描述
4M x 16bit CMOS Dynamic RAM with Extended Data Out

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4E661611D 数据手册

K4E661611D,K4E641611D

CMOS DRAM

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random

access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this

family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM

family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Extended Data Out Mode operation

• Part Identification

• 2 CAS Byte/Word Read/Write operation

- K4E661611D-TC(5.0V, 8K Ref.)

- K4E641611D-TC(5.0V, 4K Ref.)

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• ActivePowerDissipation

Unit : mW

• Available in Plastic TSOP(II) package

• +5.0V±10% power supply

Speed

-50

495

440

660

-60

605

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh time

FUNCTIONAL BLOCK DIAGRAM

Normal

K4E661611D*

K4E641611D

64ms

RAS

UCAS

LCAS

Vcc

Vss

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms

Lower

Data in

Buffer

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms

DQ0

DQ7

Row Decoder

Refresh Timer

Lower

Data out

Buffer

Refresh Control

Memory Array

• Performance Range

4,194,304 x 16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

Speed

tRAC

50ns

60ns

tCAC

13ns

15ns

tRC

tHPC

20ns

25ns

A0~A12

(A0~A11)*1

DQ8

DQ15

-50

-60

84ns

104ns

Upper

Data out

Buffer

A0~A8

(A0~A9)*1

Column Decoder

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...36

下载PDF

与K4E661611D相关器件

型号	品牌	描述	获取价格	数据表
K4E661611D-TC50	SAMSUNG	4M x 16bit CMOS Dynamic RAM with Extended Data Out	获取价格
K4E661611D-TC500	SAMSUNG	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	获取价格
K4E661611D-TC50T	SAMSUNG	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50	获取价格
K4E661611D-TC60	SAMSUNG	4M x 16bit CMOS Dynamic RAM with Extended Data Out	获取价格
K4E661611D-TC600	SAMSUNG	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	获取价格
K4E661612B	SAMSUNG	4M x 16bit CMOS Dynamic RAM with Extended Data Out	获取价格