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K4E640812E PDF预览

K4E640812E

更新时间: 2022-11-24 21:45:15
品牌 Logo 应用领域
三星 - SAMSUNG 存储
页数 文件大小 规格书
21页 193K
描述
8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E640812E 数据手册

 浏览型号K4E640812E的Datasheet PDF文件第1页浏览型号K4E640812E的Datasheet PDF文件第2页浏览型号K4E640812E的Datasheet PDF文件第4页浏览型号K4E640812E的Datasheet PDF文件第5页浏览型号K4E640812E的Datasheet PDF文件第6页浏览型号K4E640812E的Datasheet PDF文件第7页 
K4E660812E,K4E640812E  
CMOS DRAM  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Voltage on any pin relative to VSS  
Voltage on VCC supply relative to VSS  
Storage Temperature  
Symbol  
VIN, VOUT  
VCC  
Rating  
-0.5 to +4.6  
-0.5 to +4.6  
-55 to +150  
1
Units  
V
V
Tstg  
°C  
Power Dissipation  
PD  
W
Short Circuit Output Current  
IOS Address  
50  
mA  
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to  
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended  
periods may affect device reliability.  
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)  
Parameter  
Supply Voltage  
Symbol  
VCC  
VSS  
Min  
3.0  
0
Typ  
Max  
3.6  
0
Units  
3.3  
V
V
V
V
Ground  
0
-
*1  
Input High Voltage  
Input Low Voltage  
VIH  
2.0  
Vcc+0.3  
0.8  
*2  
VIL  
-
-0.3  
*1 : Vcc+1.3V at pulse width£15ns which is measured at VCC  
*2 : -1.3 at pulse width£15ns which is measured at V SS  
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)  
Parameter  
Symbol  
Min  
Max  
Units  
Input Leakage Current (Any input 0£VIN£VCC+0.3V,  
all other pins not under test=0 Volt)  
II(L)  
-5  
5
uA  
Output Leakage Current  
(Data out is disabled, 0V£VOUT£VCC)  
IO(L)  
-5  
5
uA  
Output High Voltage Level(IOH=-2mA)  
Output Low Voltage Level(IOL =2mA)  
VOH  
VOL  
2.4  
-
-
V
V
0.4  

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