生命周期: | Active | 零件包装代码: | BGA |
包装说明: | TFBGA, | 针数: | 78 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.36 | 风险等级: | 5.67 |
其他特性: | AUTO/SELF REFRESH | 备用内存宽度: | 4 |
JESD-30 代码: | R-PBGA-B78 | 长度: | 11 mm |
内存密度: | 2147483648 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 8 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 78 |
字数: | 268435456 words | 字数代码: | 256000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 95 °C |
最低工作温度: | 组织: | 256MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 1.575 V |
最小供电电压 (Vsup): | 1.425 V | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 7.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B2G0846C-HYH9 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | |
K4B2G0846C-HYH90 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | |
K4B2G0846D | SAMSUNG |
获取价格 |
2Gb D-die DDR3L SDRAM | |
K4B2G0846D-HCF8 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78 | |
K4B2G0846D-HCF8T | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.3ns, CMOS, PBGA78 | |
K4B2G0846D-HCH9 | SAMSUNG |
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DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78 | |
K4B2G0846D-HCK00 | SAMSUNG |
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DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78 | |
K4B2G0846D-HCMA | SAMSUNG |
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DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78 | |
K4B2G0846D-HCMAT | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.195ns, CMOS, PBGA78 | |
K4B2G0846D-HYF8 | SAMSUNG |
获取价格 |
2Gb D-die DDR3L SDRAM |