是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FBGA, BGA78,9X13,32 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | 最长访问时间: | 0.3 ns |
最大时钟频率 (fCLK): | 533 MHz | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B78 | JESD-609代码: | e1 |
内存密度: | 2147483648 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 4 | 端子数量: | 78 |
字数: | 536870912 words | 字数代码: | 512000000 |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 512MX4 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA78,9X13,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
最大待机电流: | 0.02 A | 子类别: | DRAMs |
最大压摆率: | 0.21 mA | 标称供电电压 (Vsup): | 1.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4B2G0446E-MCF8T | SAMSUNG |
获取价格 |
DDR DRAM, 512MX4, 0.3ns, CMOS, PBGA78, |
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K4B2G0446E-MCH9T | SAMSUNG |
获取价格 |
DDR DRAM, 512MX4, 0.255ns, CMOS, PBGA78, |
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K4B2G0846A | SAMSUNG |
获取价格 |
DDR3 SDRAM Memory |
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K4B2G0846B | SAMSUNG |
获取价格 |
DDR3 SDRAM Memory |
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K4B2G0846C | SAMSUNG |
获取价格 |
Consumer Memory |
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K4B2G0846C-HCF8T | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, CMOS, PBGA78, |
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K4B2G0846C-HCH90 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.25ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
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K4B2G0846C-HCH9T | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, CMOS, PBGA78, |
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K4B2G0846C-HCK00 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
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K4B2G0846C-HYF8 | SAMSUNG |
获取价格 |
DDR DRAM, 256MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 |
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