Datasheet > K4B1G0446E-HCF7

K4B1G0446E-HCF7

更新时间： 2024-09-26 06:36:39

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K4B1G0446E-HCF7 数据手册

1Gb DDR3 SDRAM

K4B1G04(08/16)46E

1Gb E-die DDR3 SDRAM Specification

78 / 96 FBGA with Lead-Free & Halogen-Free

(RoHS Compliant)

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AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-

WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-

OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT

GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.0 February 2009

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型号	品牌	获取价格	描述	数据表
K4B1G0446E-HCF8	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.15ns, CMOS, PBGA78,
K4B1G0446F	SAMSUNG	获取价格	DDR3 SDRAM Memory
K4B1G0446F-HCF8	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78,
K4B1G0446F-HYF8	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78
K4B1G0446F-HYF80	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78
K4B1G0446F-HYF8T	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.3ns, CMOS, PBGA78
K4B1G0446F-HYH9	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78
K4B1G0446F-HYH90	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78
K4B1G0446F-HYH9T	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.255ns, CMOS, PBGA78
K4B1G0446F-HYK0	SAMSUNG	获取价格	DDR DRAM, 256MX4, 0.225ns, CMOS, PBGA78