Datasheet > K3P6V1000B-GC120

K3P6V1000B-GC120

更新时间： 2024-02-17 15:13:09

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
4页	62K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44

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K3P6V1000B-GC120 数据手册

K3P6V1000B-GC

CMOS MASK ROM

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

4,194,304x8(byte mode)

2,097,152x16(word mode)

· Fast access time

The K3P6V1000B-GC is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 4,194,304x8 bit(byte mode) or as

2,097,152x16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

Random Access Time : 100ns(Max.)

Page Access Time

: 30ns(Max.)

This device includes page read mode function, page read mode

allows 8 words(or 16 bytes) of data to read fast in the same

page, CE and A3 ~ A20 should not be changed.

· 8 words / 16 bytes page access

· Supply voltage : single +3.3V

· Current consumption

This device operates with a 3.3V power supply, and all inputs

and outputs are TTL compatible.

Operating : 60mA(Max.)

Standby : 30mA(Max.)

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The K3P6V1000B-GC is packaged in a 44-SOP.

· Package

K3P6V1000B-GC : 44-SOP-600

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A20

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

N.C

A18

A20

A19

BUFFERS

AND

DECODER

A17

A10

A11

SENSE AMP.

38 A12

37 A13

BUFFERS

AND

DECODER

DATA OUT

BUFFERS

A14

A15

A0~A2

A-1

A16

BHE

VSS

CE 12

SOP

VSS

OE 14

Q15/A-1

Q0/Q8

Q7/Q15

CONTROL

LOGIC

29 Q14

Q13

BHE

Q2 19

Q10 20

Q12

Pin Name

A0 - A2

Pin Function

Page Address Inputs

Q11

VCC

A3 - A20

Q0 - Q14

Address Inputs

Data Outputs

K3P6V1000B-GC

Output 15(Word mode)/

LSB Address(Byte mode)

Q15 /A-1

BHE

Word/Byte selection

Chip Enable

Output Enable

Power (3.3V)

Ground

VCC

VSS

N.C

No Connection

12 3 4

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与K3P6V1000B-GC120相关器件

型号	品牌	描述	获取价格	数据表
K3P6V1000B-GC15	SAMSUNG	MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P6V1000B-GC150	SAMSUNG	MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P6V1000B-TC10	SAMSUNG	MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K3P6V1000B-TC12	SAMSUNG	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K3P6V1000B-TC120	SAMSUNG	MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
K3P6V1000B-TC15	SAMSUNG	MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格