Datasheet > K3P7C1000B-GC

K3P7C1000B-GC

更新时间： 2024-02-09 22:56:43

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM
页数	文件大小	规格书
5页	88K
描述
MASK ROM

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中文翻译

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技术参数
数据手册

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K3P7C1000B-GC 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

K3P7C1000B-GC 数据手册

Preliminary Information

K3P7C1000B-GC

CMOS MASK ROM

64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

8,388,608 x 8(byte mode)

4,194,304 x 16(word mode)

· Fast access time

Random Access : 100ns(Max.)

Page Access

8 Words / 16 Bytes page access

· Supply voltage : single +5V

· Current consumption

The K3P7C1000B-GC is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 8,388,608 x 8 bit(byte mode) or as

4,194,304 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device includes page read mode function, page read mode

allows 8 words (or 16 bytes) of data to read fast in the same

page, CE and A3 ~ A21 should not be changed.

: 30ns(Max.)

This device operates with a 5V single power supply, and all

inputs and outputs are TTL compatible.

Operating : 150mA(Max.)

Standby : 100mA(Max.)

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

· Package

-. K3P7C1000B-GC : 44-SOP-600

The K3P7C1000B-GC is packaged in a 44-SOP.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A21

MEMORY CELL

MATRIX

(4,194,304x16/

8,388,608x8)

A20

A19

A21

A18

BUFFERS

AND

DECODER

A17

A10

A11

38 A12

37 A13

SENSE AMP.

BUFFERS

AND

DECODER

DATA OUT

BUFFERS

A14

A15

A0~A2

A-1

A16

SOP

CE 12

BHE

VSS

32 VSS

OE 14

Q15/A-1

Q0/Q8

Q7/Q15

CONTROL

LOGIC

Q14

BHE

Q13

Q10 20

Q12

Pin Name

A0 - A2

Pin Function

Page Address Inputs

Address Inputs

Data Outputs

Q11

VCC

A3 - A21

Q0 - Q14

Q15 /A-1

K3P7C1000B-GC

Output 15(Word mode)/

LSB Address(Byte mode)

BHE

Word/Byte selection

Chip Enable

Output Enable

Power ( +5V)

Ground

VCC

VSS

12 3 4 5

中文翻译

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与K3P7C1000B-GC相关器件

型号	品牌	描述	获取价格	数据表
K3P7C1000B-GC10	SAMSUNG	MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P7C1000B-GC100	SAMSUNG	MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P7C1000B-GC12	SAMSUNG	MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P7C1000B-GC120	SAMSUNG	MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P7C1000B-GC15	SAMSUNG	MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44	获取价格
K3P7C1000B-TC	SAMSUNG	MASK ROM	获取价格