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K3N3S3000D-YC25 PDF预览

K3N3S3000D-YC25

更新时间: 2024-02-01 11:55:19
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
3页 46K
描述
MASK ROM, 512KX8, 250ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

K3N3S3000D-YC25 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1, TSSOP32,.8,20针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.92
最长访问时间:250 ns其他特性:TTL COMPATIBLE I/O
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:18.4 mm内存密度:4194304 bit
内存集成电路类型:MASK ROM内存宽度:8
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00003 A子类别:MASK ROMs
最大压摆率:0.015 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

K3N3S3000D-YC25 数据手册

 浏览型号K3N3S3000D-YC25的Datasheet PDF文件第2页浏览型号K3N3S3000D-YC25的Datasheet PDF文件第3页 
K3N3V(U)3000D-YC(E)/K3N3S3000D-YC(E)  
CMOS MASK ROM  
4M-Bit (512Kx8) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· 524,288 x 8 bit organization  
· Fast access time  
3.3V Operation : 100ns(Max.)  
3.0V Operation : 120ns(Max.)  
2.5V Operation : 250ns(Max.)  
· Supply voltage  
K3N3V(U)3000D-YC(E) : single +3.0V/ single +3.3V  
K3N3S3000D-YC(E) : single +2.5V  
· Current consumption  
The K3N3V(U)3000D-YC(E) and K3N3S3000D-YC(E) are  
fully static mask programmable ROM organized 524,288 x 8 bit.  
It is fabricated using silicon gate CMOS process technoiogy.  
This device operates with low power supply, and all inputs and  
outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
Operating : 25mA(Max.)  
The K3N3V(U)3000D-YC(E) and K3N3S3000D-YC(E) are  
packaged in a 32-TSOP1.  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. K3N3V(U)3000D-YC(E)/K3N3S3000D-YC(E)  
: 32-TSOP1-0820  
PRODUCT INFORMATION  
FUNCTIONAL BLOCK DIAGRAM  
Operating  
Temp Range  
Vcc Range  
(Typical)  
Speed  
(ns)  
Product  
A18  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
K3N3V(U)3000D-YC  
K3N3S3000D-YC  
K3N3V(U)3000D-YE  
K3N3S3000D-YE  
3.3V/3.0V  
2.5V  
100/120  
250  
.
.
.
.
.
.
.
.
0°C~70°C  
(524,288x8)  
DECODER  
3.3V/3.0V  
2.5V  
100/120  
250  
-20°C~85°C  
Y
SENSE AMP.  
BUFFERS  
BUFFERS  
AND  
DECODER  
A0  
PIN CONFIGURATION  
. . .  
A11  
A9  
OE  
A10  
CE  
Q7  
Q6  
Q5  
Q4  
Q3  
VSS  
Q2  
Q1  
Q0  
A0  
#1  
#32  
A8  
CE  
OE  
Q0  
Q7  
CONTROL  
LOGIC  
A13  
A14  
A17  
N.C  
VCC  
A18  
A16  
A15  
A12  
A7  
32-TSOP1  
Pin Name  
A0 - A18  
Q0 - Q7  
CE  
Pin Function  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Power  
A6  
A1  
A5  
A2  
#17  
A4  
#16  
A3  
OE  
VCC  
K3N3V(U)3000D-YC(E)  
K3N3S3000D-YC(E)  
VSS  
Ground  
N.C  
No Connection  

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