Datasheet > K3N3U3000D-YE12

K3N3U3000D-YE12

更新时间： 2024-09-24 08:28:19

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
3页	46K
描述
MASK ROM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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数据手册

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K3N3U3000D-YE12 数据手册

K3N3V(U)3000D-YC(E)/K3N3S3000D-YC(E)

CMOS MASK ROM

4M-Bit (512Kx8) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· 524,288 x 8 bit organization

· Fast access time

3.3V Operation : 100ns(Max.)

3.0V Operation : 120ns(Max.)

2.5V Operation : 250ns(Max.)

· Supply voltage

K3N3V(U)3000D-YC(E) : single +3.0V/ single +3.3V

K3N3S3000D-YC(E) : single +2.5V

· Current consumption

The K3N3V(U)3000D-YC(E) and K3N3S3000D-YC(E) are

fully static mask programmable ROM organized 524,288 x 8 bit.

It is fabricated using silicon gate CMOS process technoiogy.

This device operates with low power supply, and all inputs and

outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

Operating : 25mA(Max.)

The K3N3V(U)3000D-YC(E) and K3N3S3000D-YC(E) are

packaged in a 32-TSOP1.

Standby : 30mA(Max.)

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

· Package

-. K3N3V(U)3000D-YC(E)/K3N3S3000D-YC(E)

: 32-TSOP1-0820

PRODUCT INFORMATION

FUNCTIONAL BLOCK DIAGRAM

Operating

Temp Range

Vcc Range

(Typical)

Speed

(ns)

Product

A18

MEMORY CELL

MATRIX

BUFFERS

AND

K3N3V(U)3000D-YC

K3N3S3000D-YC

K3N3V(U)3000D-YE

K3N3S3000D-YE

3.3V/3.0V

2.5V

100/120

250

0°C~70°C

(524,288x8)

DECODER

3.3V/3.0V

2.5V

100/120

250

-20°C~85°C

SENSE AMP.

BUFFERS

AND

DECODER

PIN CONFIGURATION

. . .

A11

A10

VSS

#32

CONTROL

LOGIC

A13

A14

A17

N.C

VCC

A18

A16

A15

A12

32-TSOP1

Pin Name

A0 - A18

Q0 - Q7

Pin Function

Address Inputs

Data Outputs

Chip Enable

Output Enable

Power

#17

#16

VCC

K3N3V(U)3000D-YC(E)

K3N3S3000D-YC(E)

VSS

Ground

N.C

No Connection

12 3

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