Datasheet > K3326

K3326

更新时间： 2024-11-04 05:34:39

品牌	Logo	应用领域
日电电子 - NEC		开关
页数	文件大小	规格书
8页	72K
描述
2SK3326 - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC

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中文翻译

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K3326 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3326

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION

The 2SK3326 is N-Channel DMOS FET device that features

a low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

PART NUMBER

2SK3326

PACKAGE

Isolated TO-220

(Isolated TO-220)

FEATURES

• Low gate charge :

Q = 22 nC TYP. (V = 400 V, V = 10 V, I = 10 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

DS(on)

= 0.85 Ω MAX. (V = 10 V, I = 5.0 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

Drain to Source Voltage (V = 0 V)

500

±30

GSS(AC)

Gate to Source Voltage (V = 0 V)

D(DC)

Drain Current (DC)

±10

Drain Current (pulse) ^Note1

D(pulse)

±40

Total Power Dissipation (T = 25°C)

°C

Total Power Dissipation (T = 25°C)

2.0

Channel Temperature

150

stg

Storage Temperature

–55 to +150

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

10.7

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Starting T^ch= 25°C, V^DD= 150 V, R^G= 25Ω, V^GS= 20 V → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D14204EJ1V0DS00 (1st edition)

Date Published March 2000 NS CP(K)

Printed in Japan

2000

12 3 4 5 6 7 8

中文翻译

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