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K1C6416B8D-BI70T PDF预览

K1C6416B8D-BI70T

更新时间: 2024-11-07 21:06:47
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
47页 1168K
描述
Memory IC, 4MX16, CMOS, PBGA54

K1C6416B8D-BI70T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA54,6X9,30Reach Compliance Code:unknown
风险等级:5.84最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B54
内存密度:67108864 bit内存宽度:16
湿度敏感等级:3端子数量:54
字数:4194304 words字数代码:4000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:4MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA54,6X9,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified最大待机电流:0.00003 A
子类别:Other Memory ICs最大压摆率:0.04 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOMBase Number Matches:1

K1C6416B8D-BI70T 数据手册

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K1C6416B8D  
UtRAM2  
64Mb (4M x 16 bit) Multiplexed UtRAM2  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND  
IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS  
OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN  
SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUAR-  
ANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or defense  
application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Revision 3.0  
Sep 2007  
- 1 -  

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