是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA54,6X9,30 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 最长访问时间: | 70 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PBGA-B54 |
内存密度: | 67108864 bit | 内存宽度: | 16 |
湿度敏感等级: | 3 | 端子数量: | 54 |
字数: | 4194304 words | 字数代码: | 4000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA54,6X9,30 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 最大待机电流: | 0.00003 A |
子类别: | Other Memory ICs | 最大压摆率: | 0.04 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K1C6416B8D-FI70 | SAMSUNG |
获取价格 |
Memory IC, 4MX16, CMOS, PBGA54 | |
K1C6416B8D-FI700 | SAMSUNG |
获取价格 |
Memory IC, 4MX16, CMOS, PBGA54 | |
K1C6416B8D-FI70T | SAMSUNG |
获取价格 |
Memory IC, 4MX16, CMOS, PBGA54 | |
K1C6416B8D-I0000 | SAMSUNG |
获取价格 |
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 MM PITCH, FBGA-54 | |
K1C6416B8E-FI700 | SAMSUNG |
获取价格 |
DRAM | |
K1C6416B8E-I | SAMSUNG |
获取价格 |
Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, HALOGEN FREE AND ROHS COMPLIANT, FBGA-54 | |
K1CL0C-P02LCC0-2500 | ETC |
获取价格 |
CONN RCPT FMALE 2POS GOLD SOLDER | |
K1CL0C-P02LCC0-3000 | ETC |
获取价格 |
CONN RCPT FMALE 2POS GOLD SOLDER | |
K1CL0C-P03LCC0-2500 | ETC |
获取价格 |
CONN RCPT FMALE 3POS GOLD SOLDER | |
K1CL0C-P03LCC0-3000 | ETC |
获取价格 |
CONN RCPT FMALE 3POS GOLD SOLDER |