Datasheet > JS152KQ/22

JS152KQ/22

更新时间： 2024-11-10 14:53:43

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
3页	518K
描述
可控硅模块

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中文翻译

获取价格

数据手册

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JS152KQ/22 数据手册

Anti-parallel Module

Preliminary

Rev.0.2 Aug.3 2022

JS152KQ

Description:

1)A package consists of two inverse parallel SCR chips,

which non-repetitive peak off-state voltage is up to 2300V

2) Welding by vacuum welding technology, which provide high reliability

3) Insulated by silicone gel, provide a insulation voltage of 3000V~

V1-A-Pack

Typical Application:

Soft start, solid state relay, AC/DC switch, temperature control.

Absolute Maximum Ratings (Packaged into V1-A-Pack, unless otherwise specified, TCASE=25℃)

Values

Parameter

Test Conditions

Symbol

Unit

Operating junction temperature range

Storage temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

RMS on-state current

-40-125

℃

T_j

T_stg

1800 2000 2200

1900 2100 2300

150

T_j=25℃

V_DRM

V_RRM

V_DSM

V_RSM

I_T(RMS)

I_TSM

T_j=25℃

T_C=85℃

Peak on-state surge current

I²t value for fusing

2200

t_P=10ms V_R=0.6V_RRM

I_G=2×I_GT

I²t

11250

A²s

A/μs

Critical rate of rise of on-state current

Insulation voltage

dI/dt

V_ISO

150

A.C 50Hz(1s/1min)

3600/3000

Electrical Characteristics (Packaged into V1-A-Pack, unless otherwise specified, T_CASE=25℃)

Parameter

Peak on-state voltage

Threshold voltage

Test Conditions

I_T=300A t_P=380μs

T_j=125℃

Symbol

V_TM

Values

≤1.8

Unit

V_TO

≤0.95

≤2.1

T_j=125℃

Dynamic resistance

R_d

mΩ

TEL：+86-513-83639777

- 1 / 3-

http://www.jjwdz.com

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中文翻译

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