Datasheet > JMTK100P03A

JMTK100P03A

更新时间： 2023-12-06 19:46:56

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
7页	662K
描述
低压 P-ch (-30V ~ -5V)

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JMTK100P03A 数据手册

JMTK100P03A

Electrical Characteristics (T_J=25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ. Max. Units

Off Characteristic

V_(BR)DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Body Leakage Current

V_GS=0V, I_D= -250μA

V_DS= -30V, V_GS=0V,

V_DS=0V, V_GS= ±20V

-30

-1

μA

I_GSS

±100

On Characteristics

V_GS(th)Gate Threshold Voltage

V_DS=V_GS, I_D= -250μA

V_GS= -10V, I_D= -30A

V_GS= -4.5V, I_D= -20A

-1.0

-1.6

7.5

-2.5

Static Drain-Source on-Resistance

R_DS(on)

mΩ

note3

11.6

Dynamic Characteristics

C_iss

C_oss

C_rss

Q_g

Input Capacitance

3564

416

373

V_DS= -15V, V_GS=0V,

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_DS= -15V, I_D= -20A,

V_GS= -10V

Q_gs

Q_gd

Gate-Source Charge

Gate-Drain(“Miller”) Charge

6.5

9.4

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

V_DD= -15V, I_D= -30A,

V_GS= -10V, R_GEN=2.5Ω

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain to Source Diode Forward

I_S

-55

-220

-1.2

Current

I_SM

Maximum Pulsed Drain to Source Diode Forward Current

Drain to Source Diode Forward

V_GS=0V, I_S= -30A

Voltage

V_SD

-0.8

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. E_AScondition: T_J=25℃, V_DD= -15V, V_G= -10V, R_G=25Ω, L=0.5mH, I_AS= -22A

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

JieJie Microelectronics CO. , Ltd

Version :1.1

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