Datasheet > JANTXV2N2857

JANTXV2N2857

更新时间： 2024-11-29 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
17页	122K
描述
TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| 40MA I(C) \| TO-72

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

JANTXV2N2857 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 8 May 2002.

MIL-PRF-19500/343F

8 February 2002

SUPERSEDING

MIL-PRF-19500/343E

28 November 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,

LOW POWER, TYPES 2N2857 AND 2N2857UB

JAN, JANTX, JANTXV, AND JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low power, ultra-high

frequency transistors. Four levels of product assurance are provided for each device type and two levels for

unencapsulated chips as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 (TO-72) and 2 (surface mount) and figure 3 (JANHC, JANKC).

1.3 Maximum ratings.

P_T(1)

P_T(2)

I_C

V_CBOV_CEOV_EBOT_Jand T_STG

T_A= +25°C

T_C= +25°C

200

300

mA dc

V dc V dc V dc

30 15

°C

-65 to +200

(1) Derate linearly 1.14 mW/°C for T_A> +25°C.

(2) Derate linearly 1.71 mW/°C for T_C> +25°C.

1.4 Primary electrical characteristics at T_A= +25°C.

h_FE1

V_CE= 1 V dc

I_C= 3 mA dc

| h_fe

_CE= 6 V dc

I_C= 5 mA dc

f = 100 MHz

C_cb

V_CB= 10 V dc

I_E= 0

f = 100 kHz <

f< 1 MHz

G_pe

r_b' C_c

V_CE= 6 V dc

I_C= 1.5 mA dc

f = 450 MHz

R_g= 50 Ω

V_CE= 6 V dc

I_C= 1.5 mA dc

f = 450 MHz

V_CB= 6 V dc

I_E= 2 mA dc

f = 31.9 MHz

12.5

Min

Max

150

1.0

4.5

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...17

中文翻译

下载PDF

与JANTXV2N2857相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N2857UB	MICROSEMI	获取价格	RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Sili
JANTXV2N2880	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR
JANTXV2N2904	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2904A	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2904AL	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2905	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2905A	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2905A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
JANTXV2N2905AL	MICROSEMI	获取价格	PNP SWITCHING SILICON TRANSISTOR
JANTXV2N2906A	MICROSEMI	获取价格	PNP SMALL SIGNAL SILICON TRANSISTOR