Datasheet > JANTXV2N2919

JANTXV2N2919

更新时间： 2024-10-05 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
19页	102K
描述
TRANSISTOR \| BJT \| PAIR \| NPN \| 60V V(BR)CEO \| 30MA I(C) \| TO-77

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JANTXV2N2919 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this document shall be completed

by 14 November, 2001.

MIL-PRF-19500/355H

14 August 2001

SUPERSEDING

MIL-PRF-19500/355G

30 June 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON

TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN

silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified

in MIL-PRF-19500. Two levels of product assurance are provided for die.

* 1.2 Physical dimensions. See figure 1 (similar to T0-78), figure 2 (surface mount), figure 3 (JANHCA and

JANKCA die), figure 4 (JANHCB and JANKCB die).

1.3 Maximum ratings.

P (1)

P (2)

T and T

CBO

CEO

EBO

STG

= +25 C

One

section

Both

sections

One

section

Both

sections

600

750

mA dc

V dc

300

1.25

-65 to +200

* (1) For T_A> +25 C, derate linearly 1.71 mW/ C, one section; 3.43 mW/ C, both sections.

* (2) For T_C> +25 C, derate linearly 4.286 mW/ C, one section; 7.14 mW/ C, both sections.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...19

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与JANTXV2N2919相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N2919L	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 60V V(BR)CEO, 2-Element, NPN, Silicon, SIMILA
JANTXV2N2919U	ETC	获取价格	BJT
JANTXV2N2920	RAYTHEON	获取价格	30mA, 60V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SIMILAR TO TO-78, 6 PIN
JANTXV2N2920L	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| NPN \| 60V V(BR)CEO \| 30MA I(C) \| TO-99
JANTXV2N2920U	ETC	获取价格	BJT
JANTXV2N2944A	MICROSEMI	获取价格	PNP SILICON SMALL SIGNAL TRANSISTOR
JANTXV2N2945A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,
JANTXV2N2945A	MICROSEMI	获取价格	PNP SILICON SMALL SIGNAL TRANSISTOR
JANTXV2N2945AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), PNP,
JANTXV2N2946A	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-46,