Datasheet > JANTXV1N986CUR-1

JANTXV1N986CUR-1

更新时间： 2024-11-08 20:37:35

品牌	Logo	应用领域
CDI-DIODE		测试二极管
页数	文件大小	规格书
28页	208K
描述
Zener Diode, 110V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,

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JANTXV1N986CUR-1 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.71	其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
JEDEC-95代码：	DO-213AA	JESD-30 代码：	O-LELF-R2
湿度敏感等级：	NOT SPECIFIED	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	0.5 W	认证状态：	Not Qualified
标称参考电压：	110 V	表面贴装：	YES
技术：	ZENER	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	2%	工作测试电流：	1.1 mA
Base Number Matches：	1

JANTXV1N986CUR-1 数据手册

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 6 January 2006.

INCH-POUND

MIL-PRF-19500/117N

6 October 2005

SUPERSEDING

MIL-PRF-19500/117M

13 January 2004

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,

TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH

1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1

THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC

JANS level (see 6.4).

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall

consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator

diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided

for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for

each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).

* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and

as follows:

a. P_TL= 500 mW, (DO-35) at T_L= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink

at L = .375 inch (9.53 mm). Derate I_Zto 0.0 mA dc at +175°C.

b. P_TEC= 500 mW, (DO-213AA) at T_EC= +125°C, derate to 0 at +175°C. -65°C ≤ T_J≤ +175°C; -65°C ≤ T_STG

+175°C.

≤

c. P_T(PCB)= 500 mW, T_A= 75°C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,

ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since

contact information can change, you may want to verify the currency of this address information using the ASSIST

Online database at http://assist.daps.dla.mil.

AMSC N/A

FSC 5961

12 3 4 5 6 7...28

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与JANTXV1N986CUR-1相关器件

型号	品牌	获取价格	描述	数据表
JANTXV1N986D	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N986D-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N986D-1	CDI-DIODE	获取价格	Zener Diode, 110V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,
JANTXV1N986DUR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N986DUR-1	CDI-DIODE	获取价格	Zener Diode, 110V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA,
JANTXV1N986UR-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N987	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N987-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N987A	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes
JANTXV1N987A-1	MICROSEMI	获取价格	Silicon 500 mW Zener Diodes

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