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JANTXV1N6169US PDF预览

JANTXV1N6169US

更新时间: 2024-12-01 13:09:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2

JANTXV1N6169US 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.44
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
认证状态:Qualified参考标准:MIL
最大重复峰值反向电压:98.8 V表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N6169US 数据手册

 浏览型号JANTXV1N6169US的Datasheet PDF文件第2页 

JANTXV1N6169US 替代型号

型号 品牌 替代类型 描述 数据表
JAN1N6169US MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Unidirectional, 1 Element, Silicon, M
JANTX1N6169US MICROSEMI

类似代替

Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Unidirectional, 1 Element, Silicon, M

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