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JANTXV1N6162A

更新时间： 2024-11-04 21:01:59
品牌 Logo 应用领域
商升特 - SEMTECH 局域网二极管
页数 文件大小 规格书
2页 126K
描述
Trans Voltage Suppressor Diode, 1500W, 51.7V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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JANTXV1N6162A 技术参数

生命周期：Active包装说明：O-LALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.36其他特性：HIGH RELIABILITY
最小击穿电压：64.6 V击穿电压标称值：68 V
外壳连接：ISOLATED最大钳位电压：97.1 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LALF-W2
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Qualified参考标准：MIL-19500/516
最大重复峰值反向电压：51.7 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子形式：WIRE端子位置：AXIAL
Base Number Matches：1

JANTXV1N6162A 数据手册

 浏览型号JANTXV1N6162A的Datasheet PDF文件第2页 
1N6138A  
Thru  
QPL  
1N6173A  
1500 Watt Axial Leaded TVS  
TEL:805-498-2111 FAX:805-498-3804  
DESCRIPTION  
FEATURES:  
The 1N61xx series of transient voltage suppressors are  
designed to protect military and commercial electronic  
equipment from overvoltages caused by lightning, ESD,  
EFT, inductive load switching, and EMP. These devices are  
constructed using two p-n junction TVS diodes in a back-to-  
back configuration, hermetically sealed in a voidless glass  
package. The hermetically sealed package provides high  
reliability in harsh environmental conditions. TVS diodes  
are further characterized by their high surge capability, low  
operating and clamping voltages, and a theoretically  
instantaneous response time. This makes them ideal for  
use as board level protection for sensitive semiconductor  
components.  
•
•
•
•
•
•
1500 Watts Peak Pulse Power (tp = 10/1000µs)  
Voidless hermetically sealed glass package  
Metallurgically bonded  
High surge capacity  
Military & Industrial applications  
Available in JAN, JTX, JTXV and JANS versions  
per MIL-S-19500/516  
MECHANICAL CHARACTERISTICS:  
•
•
•
Hermetically sealed glass package  
Tinned copper leads  
Marking : P/N, date code, logo  
MAXIMUM RATINGS  
RATING  
SYMBOL  
Ppk  
VALUE  
1500  
UNIT  
Watts  
°C  
Peak Pulse Power (tp = 10 x 1000µs)  
Operating Temperature  
Tj  
-65 to +175  
-65 to +175  
5
Storage Temperature  
Tstg  
PD  
°C  
Steady-State Power Dissipation @ TL = 75ºC (3/8”)  
Watts  
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)  
REVERSE  
STAND-OFF  
VOLTAGE  
REVERSE  
LEAKAGE  
CURRENT  
MINIMUM  
BREAKDOWN  
VOLTAGE  
TEST  
CURRENT  
MAXIMUM  
CLAMPING  
VOLTAGE  
PEAK PULSE  
CURRENT  
Ipp  
TEMPERATURE  
COEFFICIENT  
MAXIMUM  
DEVICE  
TYPE  
REVERSE  
LEAKAGE  
CURRENT (Ir2)  
TA=+150°C  
(A)  
I
OF V  
BR  
αVz  
T
tp = 1mS  
V
I
V
@ I  
VC @ I  
PP  
RWM  
R
BR  
T
(V)  
5.2  
5.7  
6.2  
6.9  
(µA)  
500  
300  
100  
100  
(V)  
(mA)  
175  
175  
150  
150  
(V)  
(A)  
% / °C  
0.05  
0.06  
0.06  
0.06  
1N6138A  
1N6139A  
1N6140A  
1N6141A  
6.46  
7.13  
7.79  
8.65  
10.5  
11.2  
12.1  
13.4  
142.8  
133.9  
124.0  
111.9  
12000  
3000  
2000  
1200  
1N6142A  
1N6143A  
1N6144A  
1N6145A  
7.6  
8.4  
9.1  
9.9  
100  
20  
20  
9.50  
10.45  
11.40  
12.35  
125  
125  
100  
100  
14.5  
15.6  
16.9  
18.2  
103.4  
96.2  
88.8  
82.4  
0.07  
0.07  
0.07  
0.08  
800  
800  
600  
600  
20  
1N6146A  
1N6147A  
1N6148A  
1N6149A  
11.4  
12.2  
13.7  
15.2  
20  
20  
10  
5
14.25  
15.20  
17.10  
19.0  
75  
75  
65  
65  
21.0  
22.3  
25.1  
27.7  
71.4  
67.3  
59.8  
54.2  
0.08  
0.08  
0.085  
0.085  
400  
400  
400  
400  
1N6150A  
1N6151A  
1N6152A  
1N6153A  
16.7  
18.2  
20.6  
22.8  
5
5
5
5
20.9  
22.8  
25.7  
28.5  
50  
50  
50  
40  
30.5  
33.3  
37.4  
41.6  
49.2  
45.0  
40.1  
36.0  
0.085  
0.09  
0.09  
0.09  
400  
400  
400  
400  
1N6154A  
1N6155A  
1N6156A  
1N6157A  
1N6158A  
1N6159A  
1N6160A  
1N6161A  
1N6162A  
1N6163A  
1N6164A  
1N6165A  
1N6166A  
1N6167A  
1N6168A  
1N6169A  
25.1  
27.4  
29.7  
32.7  
35.8  
38.8  
42.6  
47.1  
51.7  
56.0  
62.2  
69.2  
76.0  
83.6  
91.2  
98.8  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
31.4  
34.2  
37.1  
40.9  
44.7  
48.5  
53.2  
58.9  
64.6  
71.3  
77.9  
86.5  
95.0  
104.5  
114.0  
123.5  
40  
30  
30  
30  
25  
25  
20  
20  
20  
20  
15  
15  
12  
12  
10  
10  
45.7  
49.9  
53.6  
59.1  
64.6  
70.1  
77.0  
85.3  
97.1  
103.1  
112.8  
125.1  
137.6  
151.3  
165.1  
178.8  
32.8  
30.1  
28.0  
25.4  
23.2  
21.4  
19.5  
17.6  
15.4  
14.5  
13.3  
12.0  
10.9  
9.9  
0.095  
0.095  
0.095  
0.095  
0.095  
0.095  
0.095  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.100  
0.105  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
400  
9.1  
8.4  
1N6170A  
1N6171A  
1N6172A  
1N6173A  
114.0  
121.6  
136.8  
152.0  
5
5
5
5
142.5  
152.0  
171.0  
190.0  
8
8
5
5
206.3  
218.4  
245.7  
273.0  
7.3  
6.9  
6.1  
5.5  
0.105  
0.105  
0.110  
0.110  
400  
400  
400  
400  
1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.  
© 1997 SEMTECH CORP.  
652 MITCHELL ROAD NEWBURY PARK CA 91320  
12

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与JANTXV1N6162A相关器件

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JANTXV1N6162AUS SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 51.7V V(RWM), Unidirectional, 1 Element, Silicon, H
JANTXV1N6162AUS.TR SEMTECH

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 		Trans Voltage Suppressor Diode,
JANTXV1N6162US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 51.7V V(RWM), Unidirectional, 1 Element, Silicon, M
JANTXV1N6162US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 51.7V V(RWM), Unidirectional, 1 Element, Silicon, H
JANTXV1N6163 MICROSEMI

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 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTXV1N6163A MICROSEMI

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 		BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTXV1N6163AUS MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, MEL
JANTXV1N6163US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, MEL
JANTXV1N6163US SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTXV1N6164 MICROSEMI

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 		BIDIRECTIONAL TRANSIENT SUPPRESSORS

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