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JANTXV1N6163US PDF预览

JANTXV1N6163US

更新时间: 2024-11-04 13:09:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
2页 110K
描述
Trans Voltage Suppressor Diode, 1500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, MELF-2

JANTXV1N6163US 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.45
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Qualified
参考标准:MIL最大重复峰值反向电压:56 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

JANTXV1N6163US 数据手册

 浏览型号JANTXV1N6163US的Datasheet PDF文件第2页 

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Trans Voltage Suppressor Diode, 1500W, 62.2V V(RWM), Unidirectional, 1 Element, Silicon, M
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Trans Voltage Suppressor Diode, 1500W, 62.2V V(RWM), Unidirectional, 1 Element, Silicon, H
JANTXV1N6164US MICROSEMI

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Trans Voltage Suppressor Diode, 1500W, 62.2V V(RWM), Unidirectional, 1 Element, Silicon, H
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Trans Voltage Suppressor Diode, 1500W, 69.2V V(RWM), Unidirectional, 1 Element, Silicon, H