5秒后页面跳转
JANTXV1N4150UR-1 PDF预览

JANTXV1N4150UR-1

更新时间: 2024-11-16 19:48:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
1页 63K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, DO-213AA, 2 PIN

JANTXV1N4150UR-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-213AA
包装说明:DO-213AA, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.16
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Qualified
参考标准:MIL-19500/231H最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANTXV1N4150UR-1 数据手册

  
FEATURES  
1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-  
19500/231  
1N4150UR-1  
SWITCHING DIODE  
METALLURGICALLY BONDED  
HERMETICALLY SEALED  
DOUBLE PLUG CONSTRUCTION  
A
LSO
A
VAILABLE
A
S
LL4150, CDLL4150,
&
MLL4150  
MAXIMUM RATINGS AT 25 °C  
Operating Temperature:  
Storage Temperature:  
Surge Current A, sine 1uS:  
Surge Current B, sine 1S:  
Total Power Dissipation:  
Operating Current:  
-65°C to +175°C  
-65°C to +175°C  
4.0A  
0.5A  
500mW  
200mA, TA= +25°C to +110°C  
Derating Factor:  
D.C. Reverse Voltage (VRWM):  
3.1mA/°C above TEC= +110°C  
50V  
DC ELECTRICAL CHARACTERISTICS  
VF IR  
VBR  
Ambient  
Ambient  
Ambient  
IF  
Min Max  
Min Max  
IR  
Min Max  
mA  
V
V
V (dc) µA  
µA  
0.1  
100  
µA  
V
V
(°C)  
(°C)  
(°C)  
25  
25  
25  
25  
25  
1
10  
50  
100  
200  
.54 .62  
.66 .74  
.76 .86  
.82 .92  
.87 1.00  
25  
150  
50  
50  
-
-
25  
10  
75  
-
AC ELECTRICAL CHARACTERISTICS AT 25°C  
DESIGN DATA  
Symbol  
Min  
Max  
Case: Hermetically sealed glass package per MIL-  
PRF-19500/231 DO-213AA outline  
Capacitance @ 0V  
pF  
-
2.5  
TRR @ IF =IR=10mA,  
nsec  
-
-
-
4
5
IRec = 1mA.  
Lead Material: Copper clad steel  
V
VFR @ IF= 200mA  
TFR @ IF = 200mA  
Lead Finish: Tin/Lead  
nsec  
10  
Thermal Resistance (RθJEC): 100°C/W maximum  
Thermal Impedance (ZθJX): 70°C/W maximum  
Polarity: Cathode end is banded.  
IRELAND - GORT ROAD, ENNIS, CO. CLARE  
PHONE:  
TOLL FREE:  
FAX:  
+353 65 6840044  
+186 62 702434  
+353 65 6822298  
WWW.MICROSEMI.COM  
U.S.A. DOMESTIC SALES CONTACT  
PHONE:  
(617) 926 0404  
1 800 666 2999  
TOLL FREE:  

JANTXV1N4150UR-1 替代型号

型号 品牌 替代类型 描述 数据表
CDLL4150 MICROSEMI

类似代替

SWITCHING DIODE
1N4150UR-1 MICROSEMI

类似代替

MINI-MELF-SMD Silicon Diode

与JANTXV1N4150UR-1相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N4153 MICROSEMI

获取价格

Silicon Switching Diode DO-35 Glass Package
JANTXV1N4153-1 MICROSEMI

获取价格

Silicon Switching Diode DO-35 Glass Package
JANTXV1N4153UR-1 CDI-DIODE

获取价格

Rectifier Diode, 1 Element, 0.15A, Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
JANTXV1N4245 SENSITRON

获取价格

HERMETIC AXIAL LEAD RECTIFIER
JANTXV1N4245 SEMTECH

获取价格

暂无描述
JANTXV1N4245US SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PI
JANTXV1N4246 SENSITRON

获取价格

HERMETIC AXIAL LEAD RECTIFIER
JANTXV1N4246 SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N4247 SENSITRON

获取价格

HERMETIC AXIAL LEAD RECTIFIER
JANTXV1N4247 SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2