5秒后页面跳转
JANTXV1N4247 PDF预览

JANTXV1N4247

更新时间: 2024-11-16 20:31:23
品牌 Logo 应用领域
商升特 - SEMTECH 二极管
页数 文件大小 规格书
2页 90K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

JANTXV1N4247 技术参数

生命周期:Active包装说明:HERMETIC SEALED PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.31Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:E-XALF-W2
最大非重复峰值正向电流:25 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:UNSPECIFIED封装形状:ELLIPTICAL
封装形式:LONG FORM认证状态:Qualified
参考标准:MIL-19500/286最大重复峰值反向电压:600 V
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

JANTXV1N4247 数据手册

 浏览型号JANTXV1N4247的Datasheet PDF文件第2页 
1N4245, 1N4246, 1N4247,  
1N4248, 1N4249  
General Purpose Silicon Rectifiers  
POWER DISCRETES  
Description  
Features  
Quick reference data  
‹ 1 Amp 55°C/no heat sink  
‹ Monolithic non-cavity construction  
‹ Fused metal oxide hermetic seal  
‹ Superior thermal shock resistance  
‹ Low thermal impedance  
VR = 200V - 1000V  
I = 1.0A  
F
trr = 2µS  
V = 1.2V  
‹ Low reverse leakage  
F
‹ PIV to 1000 volts  
These products can be supplied as JAN, JANTX or  
JANTXV per MIL-S-19500/286  
Electrical Specifications  
Electrical specifications: All temperatures are local ambient , 25°C unless otherwise specified.  
Device  
Types  
Reverse  
Voltage  
Forward  
Reverse  
Instantaneous Repetitive  
1 Cycle  
Surge  
Reverse  
Recovery  
Time (2)  
Typical  
Thermal  
Impedance  
(3)  
Current Current (Max)  
(1)  
Forward  
Voltage  
Surge  
Current  
Current  
tp = 8.3ms  
VRWM VRRM Free Air  
55°C  
IR  
VF @ IF =  
1.0Adc  
IFRM  
IFSM  
Trr  
µS  
θ J -  
L
UAdc  
°C/Watt  
V
V
A
25°C 100°C  
Vdc  
1.2  
1.2  
1.2  
1.2  
1.2  
A (pk)  
10  
A (pk)  
30  
Max. Typ. d = 0 d = .375  
1N4245  
200  
200  
400  
600  
800  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
25  
25  
25  
25  
25  
2
2
2
2
2
1
1
1
1
1
7
7
7
7
7
38  
38  
38  
38  
38  
1N4246 400  
10  
30  
1N4247  
1N4248  
600  
800  
10  
30  
10  
30  
1N4249 1000 1000  
10  
30  
Notes:  
(1) The 1.0 amp rating @ 55°C requires no heat sinking, special mounting, or forced air across the body of the  
device.  
(2) Recovery conditions: 0.5 Amp forward current to -1.0 Amp reverse current. Recovery time measured when  
rectifier recovers to -.25 Amp.  
Storage temperature: -65°C to +175°C.  
Revision: May 30, 2007  
1
www.semtech.com  

JANTXV1N4247 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N4247 SEMTECH

功能相似

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTX1N4247 SENSITRON

功能相似

HERMETIC AXIAL LEAD RECTIFIER

与JANTXV1N4247相关器件

型号 品牌 获取价格 描述 数据表
JANTXV1N4247US SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PI
JANTXV1N4248 SENSITRON

获取价格

HERMETIC AXIAL LEAD RECTIFIER
JANTXV1N4248 SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N4248US SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 PI
JANTXV1N4249 SEMTECH

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
JANTXV1N4249 SENSITRON

获取价格

HERMETIC AXIAL LEAD RECTIFIER
JANTXV1N4249US SENSITRON

获取价格

Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-1, 2 P
JANTXV1N4370 MICROSEMI

获取价格

SILICON 400 mW ZENER DIODES
JANTXV1N4370-1 MICROSEMI

获取价格

SILICON 400 mW ZENER DIODES
JANTXV1N4370A MICROSEMI

获取价格

SILICON 400 mW ZENER DIODES