生命周期: | Obsolete | 包装说明: | O-MUPM-D1 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.51 |
Is Samacsys: | N | 应用: | FAST RECOVERY POWER |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-4 |
JESD-30 代码: | O-MUPM-D1 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 100 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 1 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 10 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 参考标准: | MIL-19500/162 |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV1N1615 | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTXV1N1615R | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTXV1N1616 | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTXV1N1616R | MICROSEMI |
获取价格 |
Military Silicon Power Rectifier | |
JANTXV1N270R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 100V V(RRM), Germanium, | |
JANTXV1N276 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.04A, 100V V(RRM), Germanium, | |
JANTXV1N276R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 100V V(RRM), Germanium, | |
JANTXV1N277R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 125V V(RRM), Germanium, | |
JANTXV1N2804 | MICROSEMI |
获取价格 |
50 Watt Zener Diodes | |
JANTXV1N2804A | MICROSEMI |
获取价格 |
50 Watt Zener Diodes |