Datasheet > JANTX1N6126

JANTX1N6126

更新时间： 2024-11-04 18:55:31

品牌	Logo	应用领域
商升特 - SEMTECH		局域网二极管
页数	文件大小	规格书
20页	162K
描述
Trans Voltage Suppressor Diode, 500W, 51.7V V(RWM), Bidirectional, 1 Element, Silicon

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JANTX1N6126 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 23 October 1999.

INCH-POUND

MIL-PRF-19500/516D

23 July 1999

SUPERSEDING

MIL-S-19500/516C

20 January 1995

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,

1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,

1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,

1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,

JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS

This specification is approved for use within US Army Laboratory

Command, Department of the Army, and is available for use by all

Departments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient

voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.

1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.

1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:

2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5

for derating).

3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375

inch (9.53 mm) (see figure 6).

500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including

A and US suffix versions)) at t = 1 ms (see figure 7).

-55°C £ T

£ +175°C, -55°C £ T

£ +175°C (ambient temperatures).

STG

1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,

Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing

at the end of this document or by letter.

AMSC N/A

FSC 5961

Distribution Statement A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...20

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与JANTX1N6126相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6126A	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTX1N6126A	SENSITRON	获取价格	500 W Transient Voltage Suppressor
JANTX1N6126AUS	SENSITRON	获取价格	500 W Transient Voltage Suppressor SM
JANTX1N6126US	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 52V V(RWM), Bidirectional, 1 Element, Silicon
JANTX1N6127	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTX1N6127	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N6127A	MICROSEMI	获取价格	BIDIRECTIONAL TRANSIENT SUPPRESSORS
JANTX1N6127A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 56V V(RWM), Unidirectional, 1 Element, Silicon, HERM
JANTX1N6127A	SENSITRON	获取价格	500 W Transient Voltage Suppressor
JANTX1N6127AUS	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 500W, 56V V(RWM), Bidirectional, 1 Element, Silicon,

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