5秒后页面跳转
捷配首页

Datasheet > JANTX1N6079
JANTX1N6079 PDF预览

JANTX1N6079

更新时间： 2024-11-16 15:35:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
页数 文件大小 规格书
3页 352K
描述
Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN

阅读下载

中文翻译

获取价格

JANTX1N6079 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, GLASS, G, 2 PIN针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.8
其他特性：METALLURGICALLY BONDED, HIGH RELIABILITY应用：ULTRA FAST RECOVERY POWER
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LALF-W2JESD-609代码：e0
最大非重复峰值正向电流：175 A元件数量：1
相数：1端子数量：2
最大输出电流：12 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Qualified
参考标准：MIL-19500/503最大反向恢复时间：0.03 µs
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JANTX1N6079 数据手册

 浏览型号JANTX1N6079的Datasheet PDF文件第2页浏览型号JANTX1N6079的Datasheet PDF文件第3页 
1N6073 thru 1N6081  
VOIDLESS HERMETICALLY SEALED  
ULTRA FAST RECOVERY GLASS  
POWER RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/503 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70ºC) in  
different package sizes for working peak reverse voltages from 50 to 150 volts are  
hermetically sealed with voidless-glass construction using an internal “Category I”  
metallurgical bond. These devices are also available in surface mount MELF  
package configurations by adding a “US” suffix (see separate data sheet for  
1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speed  
requirements including standard, fast and ultrafast device types in both through-hole  
and surface mount packages.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6073 to 1N6081 series  
Voidless hermetically sealed glass package  
Extremely robust construction  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
•
Ultrafast recovery rectifier series 50 to 150 V  
•
•
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
•
•
High forward surge current capability  
Low thermal resistance  
JAN, JANTX, and JANTXV available for 1N6074 and  
1N6075 per MIL-PRF-19500/503  
•
Controlled avalanche with peak reverse power  
•
Further options for screening in accordance with MIL-  
PRF-19500 for JAN, JANTX, JANTXV, or JANS by  
using a MQ, MX, MV or MSP prefix respectively , e.g.  
MX6076, MV6079, MSP6081, etc.  
capability  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Junction Temperature: -65oC to +155oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
•
•
Storage Temperature: -65oC to +155oC  
Peak Forward Surge Current @ 25oC: 35 Amps for  
1N6073-6075, 75 Amps for 1N6076-6078, and 175  
Amps for 1N6079-6081 at 8.3 ms half-sine wave  
TERMINATIONS: Axial-leads are Copper with  
Tin/Lead (Sn/Pb) finish  
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 1N6073 thru 1N6075: 340 mg  
1N6076 thru 1N6078: 750 mg  
1N6079 thru 1N6081: 1270 mg  
See package dimensions on last page  
•
Average Rectified Forward Current (IO) at TL= +70oC  
(L= 0 inch from body):  
1N6073 thru 1N6075: 3.0 Amps  
1N6076 thru 1N6078: 6.0 Amps  
1N6079 thru 1N6081: 12.0 Amps  
Average Rectified Forward Current (IO) at TA=55oC:  
1N6073 thru 1N6075: 0.85 Amps  
1N6076 thru 1N6078: 1.3 Amps  
1N6079 thru 1N6081: 2.0 Amps  
•
•
•
Thermal Resistance L= 0 inch (RθJL): 13oC/W for  
1N6073-6075, 8.5oC/W for 1N6076-6078, and  
5.0oC/W for 1N6079-6081  
Solder temperature: 260oC for 10 s (maximum)  
Copyright 2004  
Microsemi  
Page 1  
12-08-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与JANTX1N6079相关器件

型号 品牌 获取价格 描述 数据表
JANTX1N6080 SEMTECH

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
JANTX1N6080 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JANTX1N6081 MICROSEMI

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon,
JANTX1N6081 SEMTECH

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
JANTX1N6092 E-OEC

获取价格

 		JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6093 E-OEC

获取价格

 		JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6094 E-OEC

获取价格

 		JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6100 MICROSEMI

获取价格

 		Rectifier Diode, 7 Element, 0.3A, Silicon, FP-14
JANTX1N6101 MICROSEMI

获取价格

 		MONOLITHIC AIR ISOLATED DIODE ARRAY
JANTX1N6102 SEMTECH

获取价格

 		Trans Voltage Suppressor Diode, 500W, 5.2V V(RWM), Unidirectional, 1 Element, Silicon, HER

与JANTX1N6079相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证