Datasheet > JANTX1N6080

JANTX1N6080

更新时间： 2024-11-21 20:10:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		超快速软恢复二极管
页数	文件大小	规格书
3页	229K
描述
Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN

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JANTX1N6080 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	compliant
HTS代码：	8541.10.00.80	风险等级：	5.37
其他特性：	METALLURGICALLY BONDED, HIGH RELIABILITY	应用：	ULTRA FAST RECOVERY POWER
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	O-LALF-W2	JESD-609代码：	e0
最大非重复峰值正向电流：	175 A	元件数量：	1
相数：	1	端子数量：	2
最大输出电流：	12 A	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Qualified
参考标准：	MIL-19500/503	最大重复峰值反向电压：	100 V
最大反向恢复时间：	0.03 µs	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

JANTX1N6080 数据手册

1N6073 thru 1N6081

VOIDLESS HERMETICALLY SEALED

ULTRA FAST RECOVERY GLASS

POWER RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/503 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (T_L=70ºC) in

different package sizes for working peak reverse voltages from 50 to 150 volts are

hermetically sealed with voidless-glass construction using an internal “Category I”

metallurgical bond. These devices are also available in surface mount MELF

package configurations by adding a “US” suffix (see separate data sheet for

1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular JEDEC registered 1N6073 to 1N6081 series

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Ultrafast recovery rectifier series 50 to 150 V

•

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

•

High forward surge current capability

Low thermal resistance

JAN, JANTX, and JANTXV available for 1N6074 and

1N6075 per MIL-PRF-19500/503

•

Controlled avalanche with peak reverse power

•

Further options for screening in accordance with MIL-

PRF-19500 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or MSP prefix respectively , e.g.

MX6076, MV6079, MSP6081, etc.

capability

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

•

Storage Temperature: -65^oC to +155^oC

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073-6075, 75 Amps for 1N6076-6078, and 175

Amps for 1N6079-6081 at 8.3 ms half-sine wave

TERMINATIONS: Axial-leads are Copper with

Tin/Lead (Sn/Pb) finish

•

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 1N6073 thru 1N6075: 340 mg

1N6076 thru 1N6078: 750 mg

1N6079 thru 1N6081: 1270 mg

See package dimensions on last page

•

Average Rectified Forward Current (I_O) at T_L= +70^oC

(L= 0 inch from body):

1N6073 thru 1N6075: 3.0 Amps

1N6076 thru 1N6078: 6.0 Amps

1N6079 thru 1N6081: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073 thru 1N6075: 0.85 Amps

1N6076 thru 1N6078: 1.3 Amps

1N6079 thru 1N6081: 2.0 Amps

•

Thermal Resistance L= 0 inch (R_θ_JL): 13^oC/W for

1N6073-6075, 8.5^oC/W for 1N6076-6078, and

5.0^oC/W for 1N6079-6081

Solder temperature: 260^oC for 10 s (maximum)

Microsemi

Page 1

12-08-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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JANTX1N6080 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV1N6080	MICROSEMI	功能相似	Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN
JAN1N6080	MICROSEMI	功能相似	Rectifier Diode, 1 Phase, 1 Element, 12A, Silicon, HERMETIC SEALED, GLASS, G, 2 PIN

与JANTX1N6080相关器件

型号	品牌	获取价格	描述	数据表
JANTX1N6081	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon,
JANTX1N6081	SEMTECH	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
JANTX1N6092	E-OEC	获取价格	JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6093	E-OEC	获取价格	JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6094	E-OEC	获取价格	JAN QUALIFIED HERMETIC LED INDICATORS
JANTX1N6100	MICROSEMI	获取价格	Rectifier Diode, 7 Element, 0.3A, Silicon, FP-14
JANTX1N6101	MICROSEMI	获取价格	MONOLITHIC AIR ISOLATED DIODE ARRAY
JANTX1N6102	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 5.2V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6102A	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 500W, 5.2V V(RWM), Unidirectional, 1 Element, Silicon, HER
JANTX1N6102A.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode,

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