是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | E-LELF-R2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.77 | 其他特性: | HIGH RELIABILITY, METALLURGICALLY BONDED |
应用: | ULTRA FAST RECOVERY | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 0.925 V |
JESD-30 代码: | E-LELF-R2 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 125 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 6 A | 封装主体材料: | GLASS |
封装形状: | ELLIPTICAL | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 150 V |
最大反向电流: | 5 µA | 最大反向恢复时间: | 0.03 µs |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX1N5811USTR | SENSITRON |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MEL | |
JANTX1N5812 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N5812R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 50V V(RRM), Silicon, DO-4, DO-4, 1 PIN | |
JANTX1N5814 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N5814R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N5815R | MICROSEMI |
获取价格 |
Rectifier Diode, | |
JANTX1N5816 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N5816R | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN | |
JANTX1N5819-1 | SENSITRON |
获取价格 |
HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER | |
JANTX1N5819UR-1 | SENSITRON |
获取价格 |
HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER |