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JANTX1N5645A

更新时间： 2024-11-08 23:08:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
4页 198K
描述
1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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JANTX1N5645A 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-13
包装说明：O-MALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.27
Is Samacsys：N最大击穿电压：34.7 V
最小击穿电压：31.4 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-202AA
JESD-30 代码：O-MALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：METAL
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Qualified
参考标准：MIL-19500最大重复峰值反向电压：28.2 V
表面贴装：NO技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

JANTX1N5645A 数据手册

 浏览型号JANTX1N5645A的Datasheet PDF文件第2页浏览型号JANTX1N5645A的Datasheet PDF文件第3页浏览型号JANTX1N5645A的Datasheet PDF文件第4页 
1N5629 thru 1N5665A  
1500 WATT UNIDIRECTIONAL  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru  
1N5665A are JEDEC registered selections for unidirectional devices. All  
have the same high Peak Pulse Power rating of 1500 W with extremely fast  
response times. They are also available in military qualified selections as  
described in the Features section herein. They are most often used for  
protecting against transients from inductive switching environments,  
induced RF effects, or induced secondary lightning effects as found in  
lower surge levels of IEC61000-4-5. They are also very successful in  
protecting airborne avionics and electrical systems. Since their response  
time is virtually instantaneous, they can also protect from ESD and EFT per  
IEC61000-4-2 and IEC61000-4-4.  
DO-13  
(DO-202AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Unidirectional TVS series for thru-hole mounting  
• Protection from switching transients and induced RF  
• ESD & EFT protection per IEC 61000-4-2 and -4-4  
Suppresses transients up to 1500 watts @ 10/1000 µs  
(see Figure 1)  
• Secondary lightning protection per IEC61000-4-5 with  
•
•
•
•
Clamps transient in less than 100 pico seconds  
Working voltage (VWM) range 5 V to 171 V  
Hermetic sealed DO-13 metal package  
JAN/TX/TXV military qualifications also available for  
the tighter tolerance “A” suffix devices per MIL-PRF-  
19500/500 by adding the JAN, JANTX, or JANTXV  
prefix, e.g. JANTXV1N5629A, etc.  
For bidirectional TVS in the same DO-13 package,  
see separate data sheet for the 1N6036 – 1N6072A  
series (also military qualified)  
Surface mount equivalent packages also available as  
SMCJ5.0 - SMCJ170CA or SMCG5.0 – SMCG170CA  
in separate data sheet (consult factory for other  
surface mount options)  
42 Ohms source impedance:  
Class 1: 1N5629 to 1N5665A  
Class 2: 1N5629 to 1N5663A  
Class 3: 1N5629 to 1N5655A  
Class 4: 1N5629 to 1N5648A  
• Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
•
•
Class 1 : 1N5629 to 1N5658A  
Class 2: 1N5629 to 1N5651A  
Class 3: 1N5629 to 1N5643A  
Class 4: 1N5629 to 1N5636A  
• Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
Class 2: 1N5629 to 1N5642A  
•
Plastic axial-leaded equivalents available in the  
Class 3: 1N5629 to 1N5635A  
1N6267 – 1N6303A series in separate data sheet  
• Inherently radiation hard per Microsemi MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• 1500 Watts for 10/1000 µs with repetition rate of 0.01% or  
•
•
CASE: DO-13 (DO-202AA), welded, hermetically  
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)  
sealed metal and glass  
• Operating & Storage Temperatures: -65o to +175oC  
FINISH: All external metal surfaces are Tin-Lead  
plated and solderable per MIL-STD-750 method  
2026  
• THERMAL RESISTANCE: 50oC/W junction to lead at  
0.375 inches (10 mm) from body or 110 oC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2  
copper pads (1 oz) and track width 1 mm, length 25 mm  
•
POLARITY: Cathode connected to case and polarity  
indicated by diode symbol  
• DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” (10  
•
•
•
MARKING: Part number and polarity diode symbol  
WEIGHT: 1.4 grams. (Approx)  
mm) from body (see derating in Fig 3 and note below)  
• Forward surge current: 200 Amps for 8.3ms half-sine  
TAPE & REEL option: Standard per EIA-296 (add  
wave at TA = +25oC  
“TR” suffix to part number)  
• Solder Temperatures: 260 o C for 10 s (maximum)  
•
See package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
Copyright 2002  
Microsemi  
Page 1  
11-06-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

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JANTX1N5645A 替代型号

型号 品牌 替代类型 描述 数据表
1N5645A MICROSEMI

完全替代

 TRANSIENT ABSORPTION ZENER
LC28A MICROSEMI

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 TRANSIENT ABSORPTION ZENER

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