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JANTX1N3333RB PDF预览

JANTX1N3333RB

更新时间： 2024-11-08 15:35:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
12页 82K
描述
Zener Diode, 52V V(Z), 5%, 50W, Silicon, Unidirectional, DO-5, DO-5, 1 PIN

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JANTX1N3333RB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DO-5
包装说明：O-MUPM-D1针数：1
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.36
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-5JESD-30 代码：O-MUPM-D1
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：1
封装主体材料：METAL封装形状：ROUND
封装形式：POST/STUD MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：50 W
认证状态：Qualified参考标准：MIL-19500/358E
标称参考电压：52 V表面贴装：NO
技术：ZENER端子面层：Tin/Lead (Sn/Pb)
端子形式：SOLDER LUG端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：5%
工作测试电流：240 mABase Number Matches：1

JANTX1N3333RB 数据手册

 浏览型号JANTX1N3333RB的Datasheet PDF文件第2页浏览型号JANTX1N3333RB的Datasheet PDF文件第3页浏览型号JANTX1N3333RB的Datasheet PDF文件第4页浏览型号JANTX1N3333RB的Datasheet PDF文件第5页浏览型号JANTX1N3333RB的Datasheet PDF文件第6页浏览型号JANTX1N3333RB的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this  
revision shall be completed by 23 October 1999.  
INCH-POUND  
MIL-PRF-19500/358E  
23 July 1999  
SUPERSEDING  
MIL-S-19500/358D  
26 May 1994  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR  
TYPES 1N3305 THROUGH 1N3350, B AND RB, 1N4549 THROUGH 1N4554, B AND RB,  
JAN, JANTX, JANTXV, AND JANS  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for B type (standard polarity) and RB type (reverse polarity), 50  
watt, silicon, voltage regulator diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-  
19500.  
1.2 Physical dimensions. See figure 1 (D0-5).  
1.3 Maximum ratings. Maximum ratings are as shown in columns 3, 7, and 9 of table II herein and as follows:  
Derate P = 50 W at T ³ +75°C at 0.5 W/°C above T ³ +75°C.  
T
C
C
-65°C £ T £ +150°C; -65°C £ T  
£ +175°C.  
STG  
C
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 1, 8, 11, and 12 of table II herein,  
and as follows:  
Thermal resistance (R ) = 2.0°C/W maximum.  
qJC  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
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JANTX1N3334 MICROSEMI

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JANTX1N3334B MICROSEMI

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 		Zener Diode, 56V V(Z), 5%, 50W, Silicon, Unidirectional, DO-5, DO-5, 1 PIN
JANTX1N3334B MOTOROLA

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JANTX1N3334D MICROSEMI

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 		Zener Diode, 56V V(Z), 1%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL
JANTX1N3334RA MICROSEMI

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 		Zener Diode, 56V V(Z), 10%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL
JANTX1N3334RB MOTOROLA

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 		56 V, 50 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
JANTX1N3334RC MICROSEMI

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 		Zener Diode, 56V V(Z), 2%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL
JANTX1N3334RD MICROSEMI

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 		Zener Diode, 56V V(Z), 1%, 50W, Silicon, Unidirectional, DO-203AB, HERMETIC SEALED, METAL
JANTX1N3335B MOTOROLA

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 		Zener Diode, 62V V(Z), 5%, 50W, Silicon, Unidirectional
JANTX1N3335B MICROSEMI

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 		Zener Diode, 62V V(Z), 5%, 50W, Silicon, Unidirectional, DO-5, DO-5, 1 PIN

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