Datasheet > JANSD2N5152U3

JANSD2N5152U3

更新时间： 2024-02-26 10:19:13

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
8页	216K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANSD2N5152U3 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.78	认证状态：	Qualified
Base Number Matches：	1

JANSD2N5152U3 数据手册

JANS 2N5152U3 and JANS 2N5154U3

ꢀ

Qualified Levels:

RADIATION HARDENED

JANSM, JANSD,

JANSP, JANSL,

JANSR, JANSF

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

DESCRIPTION

These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

U3 (SMD-0.5)

Package

ꢀ

JEDEC registered 2N5152 and 2N5154.

JANS RHA qualifications are available per MIL-PRF-19500/544.

Also available in:

TO-5 Package

(long-leaded)

JANS_2N5152L &

JANS_2N5154L

APPLICATIONS / BENEFITS

TO-39 Package

(leaded)

ꢀ

High frequency operation.

Lightweight.

JANS_2N5152 &

JANS_2N5154

High-speed power-switching applications.

High-reliability applications.

MAXIMUM RATINGS

Parameters/Test Conditions

Symbol

T_Jand T_STG

R_ꢀJA

Value

-65 to +200

Unit

ºC

ºC/W

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Reverse Pulse Energy ⁽¹⁾

175

R_ꢀJC

MSC – Lawrence

6 Lake Street,

Collector Current (dc)

I_C

Collector to base voltage (static), emitter open

Collector to emitter voltage (static) base open

Emitter to base voltage (static) collector open

Steady-State Power Dissipation @ T_A= +25 ºC

Steady-State Power Dissipation @ T_C= +25 ºC

V_CBO

V_CEO

V_EBO

P_D

100

5.5

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

P_D

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit.

Website:

www.microsemi.com

ꢀ

T4-LDS-0100-2 Rev. 2 (06/02/14)

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

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与JANSD2N5152U3相关器件

型号	品牌	获取价格	描述	数据表
JANSD2N5153L	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-
JANSD2N5154	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSD2N5154L	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSD2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSD2N7373	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254
JANSD2N7381	MICROSEMI	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
JANSD2N7382	MICROSEMI	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
JANSDTB122	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
JANSDTD122	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
JANSF2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A

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