Datasheet > JANSD2N5154L

JANSD2N5154L

更新时间： 2023-01-02 20:07:50

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
8页	773K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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JANSD2N5154L 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.78	认证状态：	Qualified
Base Number Matches：	1

JANSD2N5154L 数据手册

JANS 2N5152L and JANS 2N5154L

Qualified Levels:

RADIATION HARDENED

JANSM, JANSD,

JANSP, JANSL,

JANSR, JANSF

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/544

DESCRIPTION

These RHA level 2N5152L and 2N5154L silicon transistor devices are military Radiation

Hardness Assurance qualified up to a JANSF level for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N5152 and 2N5154.

JANS RHA qualifications are available per MIL-PRF-19500/544.

TO-5 Package

Also available in:

TO-39 Package

(leaded)

APPLICATIONS / BENEFITS

JANS_2N5152 &

•

High frequency operation.

Lightweight.

JANS_2N5154

High-speed power-switching applications.

High-reliability applications.

U3 Package

(surface mount)

JANS_2N5152U3 &

JANS_2N5154U3

MAXIMUM RATINGS

Parameters/Test Conditions

Symbol

Value

Unit

ºC

Junction and Storage Temperature

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case

Reverse Pulse Energy ⁽¹⁾

T_Jand T_STG

R_ӨJA

-65 to +200

175

ºC/W

R_ӨJC

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Collector Current (dc)

I_C

Collector to base voltage (static), emitter open

Collector to emitter voltage (static) base open

Emitter to base voltage (static) collector open

Steady-State Power Dissipation @ T_A= +25 ºC

Steady-State Power Dissipation @ T_C= +25 ºC

V_CBO

V_CEO

V_EBO

P_D

100

5.5

Fax: (978) 689-0803

P_D

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load

energy test circuit.

Website:

www.microsemi.com

T4-LDS-0100-1, Rev. 1 (120716)

Page 1 of 8

12 3 4 5 6 7 8

中文翻译

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与JANSD2N5154L相关器件

型号	品牌	获取价格	描述	数据表
JANSD2N5154U3	MICROSEMI	获取价格	Small Signal Bipolar Transistor,
JANSD2N7373	MICROSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254
JANSD2N7381	MICROSEMI	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
JANSD2N7382	MICROSEMI	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
JANSDTB122	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
JANSDTD122	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
JANSF2N2221A	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSF2N2221AL	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A
JANSF2N2221AUA	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC
JANSF2N2221AUB	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC

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