是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.86 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANSD2N3637UB | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5152 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5152L | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5152U3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5153L | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO- | |
JANSD2N5154 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5154L | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N5154U3 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, | |
JANSD2N7373 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, TO-254 | |
JANSD2N7381 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me |