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JANS1N5292-1 PDF预览

JANS1N5292-1

更新时间: 2024-11-06 21:16:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 30K
描述
Current Regulator Diode, 0.62mA I(S), 1.13V V(L), Silicon, DO-35, DO-35, 2 PIN

JANS1N5292-1 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-7
包装说明:O-XALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.13
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:CURRENT REGULATOR DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-XALF-W2JESD-609代码:e0
最大限制电压:1.13 V元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Qualified参考标准:MIL-19500/463
标称调节电流 (Ireg):0.62 mA表面贴装:NO
技术:FIELD EFFECT端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

JANS1N5292-1 数据手册

 浏览型号JANS1N5292-1的Datasheet PDF文件第2页 
• 1N5283-1 THRU 1N5314-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/463  
1N5283 thru 1N5314  
and  
• CURRENT REGULATOR DIODES  
1N5283-1 thru 1N5314-1  
• HIGH SOURCE IMPEDANCE  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
DC Power Dissipation: 500mW @ T = +50°C, L = 3/8”  
L
Power Derating: 4 mW / °C above +50°C  
Peak Operating Voltage: 100 Volts  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed  
MINIMUM  
DYNAMIC  
IMPEDANCE  
MINIMUM  
KNEE  
IMPEDANCE  
@V = 6.0 V  
K
MAXIMUM  
LIMITING  
VOLTAGE  
REGULATOR CURRENT  
TYPE  
l p (mA) @ V = 25V  
S
@V = 25V  
S
NUMBER  
Z
(M )  
Z
(M )  
@ l = 0.8 lp (min)  
L
S
K
NOM  
MIN  
MAX  
(Note 1)  
(Note 2)  
V
(VOLTS)  
L
1N5283  
1N5284  
1N5285  
1N5286  
1N5287  
0.22  
0.24  
0.27  
0.30  
0.33  
0.198  
0.216  
0.243  
0.270  
0.297  
0.242  
0.264  
0.297  
0.330  
0.363  
25.0  
19.0  
14.0  
9.0  
2.75  
2.35  
1.95  
1.60  
1.35  
1.00  
1.00  
1.00  
1.00  
1.00  
6.6  
1N5288  
1N5289  
1N5290  
1N5291  
1N5292  
0.39  
0.43  
0.47  
0.56  
0.62  
0.351  
0.387  
0.423  
0.504  
0.558  
0.429  
0.473  
0.517  
0.616  
0.682  
4.10  
3.30  
2.70  
1.90  
1.55  
1.00  
1.05  
1.05  
1.05  
1.10  
1.13  
0.870  
0.750  
0.560  
0.470  
FIGURE 1  
1N5293  
1N5294  
1N5295  
1N5296  
1N5297  
0.68  
0.75  
0.82  
0.91  
1.00  
0.612  
0.675  
0.738  
0.819  
0.900  
0.748  
0.825  
0.902  
1.001  
1.100  
1.35  
1.15  
1.00  
0.880  
0.800  
0.400  
0.335  
0.290  
0.240  
0.205  
1.15  
1.20  
1.25  
1.29  
1.35  
DESIGN DATA  
1N5298  
1N5299  
1N5300  
1N5301  
1N5302  
1.10  
1.20  
1.30  
1.40  
1.50  
0.990  
1.08  
1.17  
1.26  
1.35  
1.210  
1.32  
1.43  
1.54  
1.65  
0.700  
0.640  
0.580  
0.540  
0.510  
0.180  
0.155  
0.135  
0.115  
0.105  
1.40  
1.45  
1.50  
1.55  
1.60  
CASE: Hermetically sealed glass  
case. DO – 7 outline.  
1N5303  
1N5304  
1N5305  
1N5306  
1N5307  
1.60  
1.80  
2.00  
2.20  
2.40  
1.44  
1.62  
1.80  
1.98  
2.16  
1.76  
1.98  
2.20  
2.42  
2.64  
0.475  
0.420  
0.395  
0.370  
0.345  
0.092  
0.074  
0.061  
0.052  
0.044  
1.65  
1.75  
1.85  
1.95  
2.00  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
1N5308  
1N5309  
1N5310  
1N5311  
1N5312  
2.70  
3.00  
3.30  
3.60  
3.90  
2.43  
2.70  
2.97  
3.24  
3.51  
2.97  
3.30  
3.63  
3.96  
4.29  
0.320  
0.300  
0.280  
0.265  
0.255  
0.035  
0.029  
0.024  
0.020  
0.017  
2.15  
2.25  
2.35  
2.50  
2.60  
THERMAL RESISTANCE: (R  
):  
OJEC  
250 °C/W maximum at L = .375 inch  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 25  
OJX  
1N5313  
1N5314  
4.30  
4.70  
3.87  
4.23  
4.73  
5.17  
0.245  
0.235  
0.014  
0.012  
2.75  
2.90  
POLARITY: Diode to be operated with  
the banded (Cathode) end negative.  
NOTE 1  
NOTE 2  
Z
Z
is derived by superimposing A 90Hz RMS signal equal to 10% of V on V  
S
S
S
K
WEIGHT: 0.2 grams.  
is derived by superimposing A 90Hz RMS signal equal to 10% of V on V  
K
K
MOUNTING POSITION: Any.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
59  

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