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JANKCA1N4576A PDF预览

JANKCA1N4576A

更新时间: 2024-02-25 12:58:22
品牌 Logo 应用领域
CDI-DIODE 二极管
页数 文件大小 规格书
21页 858K
描述
Zener Diode, 6.4V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3

JANKCA1N4576A 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:S-XUUC-N3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.27
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:S-XUUC-N3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP最大功率耗散:0.5 W
认证状态:Qualified参考标准:MIL-19500/452G
标称参考电压:6.4 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
最大电压容差:5%Base Number Matches:1

JANKCA1N4576A 数据手册

 浏览型号JANKCA1N4576A的Datasheet PDF文件第2页浏览型号JANKCA1N4576A的Datasheet PDF文件第3页浏览型号JANKCA1N4576A的Datasheet PDF文件第4页浏览型号JANKCA1N4576A的Datasheet PDF文件第5页浏览型号JANKCA1N4576A的Datasheet PDF文件第6页浏览型号JANKCA1N4576A的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 1 October 2004.  
INCH-POUND  
MIL-PRF-19500/452G  
1 July 2004  
SUPERSEDING  
MIL-PRF-19500/452F  
18 September 2003  
* PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE,  
TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1  
THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED  
(TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H;  
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias  
current, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each  
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each  
unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided  
for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as  
specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA),  
figure 4 (JANHCB and JANKCB), and figure 5 (JANHCC and JANKCC).  
1.3 Maximum ratings. (Unless otherwise specified TA = +25°C).  
P
T
T
and T  
I (1)  
ZM  
Power derating  
STG  
J
above T = +25°C  
A
mW  
500  
mA dc  
70  
°C  
-55 to +175  
mW/°C  
3.33  
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper Iz as specified in  
1.4 herein.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
Semiconductor@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  

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