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JANKCA1N5553

更新时间： 2024-01-02 21:29:23
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This specification covers the performance requirements for silicon, general purpose,

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JANKCA1N5553 数据手册

 浏览型号JANKCA1N5553的Datasheet PDF文件第2页浏览型号JANKCA1N5553的Datasheet PDF文件第3页浏览型号JANKCA1N5553的Datasheet PDF文件第4页浏览型号JANKCA1N5553的Datasheet PDF文件第5页浏览型号JANKCA1N5553的Datasheet PDF文件第6页浏览型号JANKCA1N5553的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 19 July 2004.  
INCH-POUND  
MIL-PRF-19500/420H  
19 April 2004  
SUPERSEDING  
MIL-PRF-19500/420G  
30 December 2002  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,  
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,  
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,  
JANHCE, JANKCA, JANKCD, AND JANKCE  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor  
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in  
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US  
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.  
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines.  
Col. 1  
Type  
Col. 3  
Col. 4  
Col. 5  
Col. 6  
Col. 7  
Col. 8  
Col. 2  
I
I
T
J
I
T
STG  
O1  
T = +55°C;  
FSM  
= 2 A dc  
O
O2  
V
RWM  
V
(BR)  
I
p
T =  
A
L
and  
(BR)min  
L = .375 inch t = 1/120 s  
+55°C  
V
(1) (2) (3)  
T = +55°C  
(2) (4)  
A
V dc  
A dc  
A(pk)  
A dc  
°C  
°C  
1N5550, 1N5550US  
1N5551, 1N5551US  
1N5552, 1N5552US  
1N5553, 1N5553US  
200  
400  
600  
800  
200  
400  
600  
800  
5
5
5
5
5
100  
100  
100  
100  
100  
3
3
3
3
3
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +175  
-65 to +175  
-65 to +175  
-65 to +175  
-65 to +175  
1N5554, 1N5554US 1,000  
1,000  
(1) Derate linearly at 41.6 mA/°C above T = +55°C at L = .375 inch (9.53 mm).  
L
(2) An I of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the  
O
maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).  
Barometric pressure reduced:  
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).  
1N5553, 1N5554  
- 33 mmHg (70,000 feet).  
(3) Does not apply to surface mount devices.  
(4) Derate linearly at 25 mA/°C above T = +55°C.  
A
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to  
Semiconduction@dscc.dla.mil . Since contact information can change, you may want to verify the currency of  
this address information using the ASSIST Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...28

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 		This specification covers the performance requirements for silicon, general purpose,
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