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JANHCA1N823 PDF预览

JANHCA1N823

更新时间: 2024-11-02 14:38:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 352K
描述
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, HERMETIC SEALED, DIE-3

JANHCA1N823 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DIE包装说明:S-XUUC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.49配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:S-XUUC-N3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP最大功率耗散:0.5 W
认证状态:Qualified参考标准:MIL-19500/159M
标称参考电压:6.2 V表面贴装:YES
技术:ZENER端子面层:Tin/Lead (Sn/Pb)
端子形式:NO LEAD端子位置:UPPER
最大电压容差:5%Base Number Matches:1

JANHCA1N823 数据手册

 浏览型号JANHCA1N823的Datasheet PDF文件第2页 
1N821 thru 1N829A  
and  
• 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN JAN, JANTX, JANTXV  
AND JANS PER MIL-PRF-19500/159  
1N821-1 thru 1N829-1  
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES  
• METALLURGICALLY BONDED  
• DOUBLE PLUG CONSTRUCTION  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
DC Power Dissipation: 500mW @ +50°C  
Power Derating: 4 mW / °C above +50°C  
REVERSE LEAKAGE CURRENT  
lR = 2µA @ 25°C & VR = 3 Vdc  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise speci½ed.  
JEDEC  
TYPE  
NUMBER  
ZENER  
VOLTAGE  
ZENER  
TEST  
CURRENT  
MAXIMUM  
ZENER  
IMPEDANCE  
(Note 1)  
VOLTAGE  
TEMPERATURE  
STABILITY  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
v
@ I  
I
³V  
z
ZT  
ZT  
ZT  
Z
-55° to +100°  
ZT  
FIGURE 1  
(Note 2)  
VOLTS  
mA  
OHMS  
mV  
% / °C  
1N821  
1N821A  
1N822  
5.9—6.5  
5.9—6.5  
5.9—6.5  
7.5  
7.5  
7.5  
15  
10  
15  
96  
96  
96  
0.01  
0.01  
0.01  
DESIGN DATA  
1N823  
1N823A  
1N824 †  
5.9—6.5  
5.9—6.5  
5.9—6.5  
7.5  
7.5  
7.5  
15  
10  
15  
48  
48  
48  
0.005  
0.005  
0.005  
CASE: Hermetically sealed glass  
1N825  
1N825A  
1N826  
5.9—6.5  
5.9—6.5  
6.2—6.9  
7.5  
7.5  
7.5  
15  
10  
15  
19  
19  
20  
0.002  
0.002  
0.002  
case. DO – 35 outline.  
LEAD MATERIAL: Copper clad steel.  
LEAD FINISH: Tin / Lead  
1N827  
1N827A  
1N828  
5.9—6.5  
5.9—6.5  
6.2—6.9  
7.5  
7.5  
7.5  
15  
10  
15  
9
9
10  
0.001  
0.001  
0.001  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
1N829  
1N829A  
5.9—6.5  
5.9—6.5  
7.5  
7.5  
15  
10  
5
5
0.0005  
0.0005  
MOUNTING POSITION: Any.  
† Double Anode: Electrical Speci½cations Apply Under Both Bias Polarities.  
NOTE 1 Zener impedance is derived by superimposing on l  
A 60Hz rms a.c. current equal  
ZT  
to 10% of l  
.
ZT  
NOTE 2 The maximum allowable change observed over the entire temperature range i.e.,  
the diode voltage will not exceed the speci½ed mV at any discrete temperature  
between the established limits, per JEDEC standard No. 5.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
15  

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