生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | IN-LINE, R-CDIP-T18 | 针数: | 18 |
Reach Compliance Code: | compliant | 风险等级: | 5.64 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | JESD-30 代码: | R-CDIP-T18 |
元件数量: | 8 | 端子数量: | 18 |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
认证状态: | Not Qualified | 参考标准: | MIL |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN2802J | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
JAN2803J | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
JAN2804J | MICROSEMI |
获取价格 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS | |
JAN2805J | MICROSEMI |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, | |
JAN2N0328A | MICROSEMI |
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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
JAN2N0328AS | MICROSEMI |
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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
JAN2N0329A | MICROSEMI |
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Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
JAN2N0329AS | MICROSEMI |
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Small Signal Bipolar Transistor, 35V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, | |
JAN2N0497 | MICROSEMI |
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Small Signal Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN | |
JAN2N0497S | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 60V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN |