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JAN1N753C-1 PDF预览

JAN1N753C-1

更新时间： 2024-11-06 21:09:43
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
21页 75K
描述
Zener Diode, 6.2V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-204AH,

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JAN1N753C-1 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.7其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-204AHJESD-30 代码：O-LALF-W2
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：0.48 W认证状态：Not Qualified
标称参考电压：6.2 V表面贴装：NO
技术：ZENER端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：2%工作测试电流：20 mA
Base Number Matches：1

JAN1N753C-1 数据手册

 浏览型号JAN1N753C-1的Datasheet PDF文件第2页浏览型号JAN1N753C-1的Datasheet PDF文件第3页浏览型号JAN1N753C-1的Datasheet PDF文件第4页浏览型号JAN1N753C-1的Datasheet PDF文件第5页浏览型号JAN1N753C-1的Datasheet PDF文件第6页浏览型号JAN1N753C-1的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 3 August 2004.  
INCH-POUND  
MIL-PRF-19500/127P  
3 May 2004  
SUPERSEDING  
MIL-PRF-19500/127N  
09 July 1999  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,  
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH  
1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1  
THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,  
1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH  
1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,  
JAN, JANTX, JANTXV, JANHC, AND JANKC  
JANS level (see 6.4).  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall  
consist of this specification sheet and MIL-PRF-19500.  
1. SCOPE  
* 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator  
diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each  
encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each  
unencapsulated device .  
1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures  
3 and 4 for die.  
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and  
as follows:  
PT = 500 mW, (DO-35) at TL = +50 C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at  
°
L = .375 inch (9.53 mm). Derate IZ to 0.0 mA dc at +175 C.  
°
PT = 500 mW, (DO-213AA) at TEC = +125 C, derate to 0 at +175 C. -65 C TJ ≤ +175 C; -65 C TSTG ≤  
°
°
°
≤
°
°
≤
+175 C.  
°
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...21

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 		Zener Diode, 6.2V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,
JAN1N753CURTR MICROSEMI

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 		SILICON 400 mW ZENER DIODES
JAN1N753CURTR-1 MICROSEMI

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 		SILICON 400 mW ZENER DIODES
JAN1N753D MICROSEMI

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 		SILICON 400 mW ZENER DIODES
JAN1N753D-1 MICROSEMI

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 		SILICON 400 mW ZENER DIODES
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 		Zener Diode, 6.2V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH,

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