生命周期: | Active | 包装说明: | O-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.36 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 最小击穿电压: | 114 V |
击穿电压标称值: | 120 V | 外壳连接: | ISOLATED |
最大钳位电压: | 165.1 V | 配置: | COMMON CATHODE, 2 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-LALF-W2 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 2 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 极性: | BIDIRECTIONAL |
最大功率耗散: | 5 W | 认证状态: | Qualified |
参考标准: | MIL-19500/516 | 最大重复峰值反向电压: | 91.2 V |
最大反向电流: | 5 µA | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JAN1N6168AUS | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 91.2V V(RWM), Unidirectional, 1 Element, Silicon, M | |
JAN1N6168AUS | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 91.2V V(RWM), Unidirectional, 1 Element, Silicon, | |
JAN1N6169 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6169A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6169A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Bidirectional, 2 Element, Silicon, HE | |
JAN1N6169AUS | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Unidirectional, 1 Element, Silicon, M | |
JAN1N6169US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 98.8V V(RWM), Unidirectional, 1 Element, Silicon, M | |
JAN1N6170 | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6170A | MICROSEMI |
获取价格 |
BIDIRECTIONAL TRANSIENT SUPPRESSORS | |
JAN1N6170A | SEMTECH |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 114V V(RWM), Bidirectional, 2 Element, Silicon, HER |