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JAN1N6144US

更新时间： 2024-11-23 18:55:31
品牌 Logo 应用领域
商升特 - SEMTECH 局域网二极管
页数 文件大小 规格书
20页 162K
描述
Trans Voltage Suppressor Diode, 1500W, 9.1V V(RWM), Unidirectional, 1 Element, Silicon,

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JAN1N6144US 技术参数

生命周期：Active包装说明：O-LELF-R2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.34
Is Samacsys：N外壳连接：ISOLATED
最大钳位电压：17.7 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-LELF-R2最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL认证状态：Qualified
最大重复峰值反向电压：9.1 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

JAN1N6144US 数据手册

 浏览型号JAN1N6144US的Datasheet PDF文件第2页浏览型号JAN1N6144US的Datasheet PDF文件第3页浏览型号JAN1N6144US的Datasheet PDF文件第4页浏览型号JAN1N6144US的Datasheet PDF文件第5页浏览型号JAN1N6144US的Datasheet PDF文件第6页浏览型号JAN1N6144US的Datasheet PDF文件第7页 
The documentation and process  
conversion measures necessary to  
comply with this revision shall be  
completed by 23 October 1999.  
INCH-POUND  
MIL-PRF-19500/516D  
23 July 1999  
SUPERSEDING  
MIL-S-19500/516C  
20 January 1995  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE  
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,  
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,  
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,  
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,  
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS  
This specification is approved for use within US Army Laboratory  
Command, Department of the Army, and is available for use by all  
Departments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient  
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.  
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.  
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:  
P
=
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at T = +25°C (see figure 5  
R
R
A
for derating).  
P
=
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75°C for L = 0.375  
L
inch (9.53 mm) (see figure 6).  
P
PR  
=
500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including  
A and US suffix versions)) at t = 1 ms (see figure 7).  
p
-55°C £ T  
£ +175°C, -55°C £ T  
£ +175°C (ambient temperatures).  
STG  
op  
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,  
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing  
at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
Distribution Statement A. Approved for public release; distribution is unlimited.  
1234567...20

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JAN1N6145A SEMTECH

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JAN1N6146A SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 11.4V V(RWM), Bidirectional, 2 Element, Silicon, HE
JAN1N6146A MICROSEMI

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JAN1N6146AUS SEMTECH

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 		Trans Voltage Suppressor Diode, 1500W, 11.4V V(RWM), Unidirectional, 1 Element, Silicon,
JAN1N6146US MICROSEMI

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 		Trans Voltage Suppressor Diode, 1500W, 11.4V V(RWM), Unidirectional, 1 Element, Silicon, M

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