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JAN1N5540CUR-1 PDF预览

JAN1N5540CUR-1

更新时间： 2024-11-23 23:05:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管测试
页数 文件大小 规格书
3页 188K
描述
Low Voltage Surface Mount 500 mW Avalanche Diodes

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中文翻译

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JAN1N5540CUR-1 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-213AA
包装说明：R-LELF-R2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.29
其他特性：METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：100 Ω
JEDEC-95代码：DO-213AAJESD-30 代码：R-LELF-R2
JESD-609代码：e0元件数量：1
端子数量：2最高工作温度：200 °C
最低工作温度：-65 °C封装主体材料：GLASS
封装形状：RECTANGULAR封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Qualified
参考标准：MIL-19500标称参考电压：20 V
子类别：Voltage Reference Diodes表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：2%
工作测试电流：1 mABase Number Matches：1

JAN1N5540CUR-1 数据手册

 浏览型号JAN1N5540CUR-1的Datasheet PDF文件第2页浏览型号JAN1N5540CUR-1的Datasheet PDF文件第3页 
IN5518BUR-1 thru 1N5546BUR-1  
(or MLL5518B-1 thru MLL5546B-1)  
Low Voltage Surface Mount  
500 mW Avalanche Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface  
mount Zener voltage regulators provides a selection from 3.3 to 33 volts in  
standard 5% tolerances as well as tighter tolerances identified by different  
suffix letters on the part number. These have an internal-metallurgical-bond  
option as identified by the “–1” suffix. This internally bonded Zener package  
construction is also in JAN, JANTX, and JANTXV military qualifications.  
Microsemi also offers numerous other Zener products to meet higher and  
lower power applications.  
DO-213AA  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount equivalent to JEDEC registered  
•
Regulates voltage over a broad operating current  
1N5518 thru 1N5546 series  
and temperature range  
•
•
Internal metallurgical bond with the “-1” suffix  
•
•
Extensive selection from 3.3 to 33 V  
Also available in JAN, JANTX, and JANTXV  
qualifications per MIL-PRF-19500/437 by adding  
the JAN, JANTX, or JANTXV prefixes to part  
numbers for desired level of screening; (e.g.  
JANTX1N4099UR-1, JANTXV1N4109CUR-1, etc.)  
Nonbonded types also available without the “-1”  
suffix for both the axial and surface mount  
packages  
DO-7 or DO-35 glass body axial-leaded Zener  
equivalents also available per JEDEC registration  
with part numbers 1N5518 thru 1N5546 on  
separate data sheets  
Standard voltage tolerances are plus/minus 5% with  
a “B” suffix, e.g. 1N5518BUR-1, etc.  
•
Tight tolerances available in plus or minus 2% or 1%  
with C or D suffix respectively, e.g. 1N5518CUR-1,  
1N5518DUR-1, etc.  
Hermetically sealed surface mount package  
Nonsensitive to ESD per MIL-STD-750 Method 1020  
Minimal capacitance (see Figure 3)  
•
•
•
•
•
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating and Storage temperature: -65ºC to  
•
•
•
CASE: Hermetically sealed glass DO-213AA  
+175ºC  
(SOD80 or MLL34) MELF style package  
Thermal Resistance: 100 ºC/W junction to end cap,  
or 250ºC/W junction to ambient when mounted on  
FR4 PC board (1 oz Cu) with recommended  
footprint (see last page)  
Steady-State Power: 0.5 watts at end cap  
temperature TEC < 125oC or at ambient TA < 50ºC  
when mounted on FR4 PC board as described for  
thermal resistance above (see Figure 2 for  
derating)  
TERMINALS: End caps tin-lead plated solderable  
per MIL-STD-750, method 2026  
POLARITY: Cathode indicated by band where  
diode is to be operated with the banded end positive  
with respect to the opposite end for Zener regulation  
•
•
•
MARKING: cathode band only  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 2000 per 7 inch reel or 5000 per  
13 inch reel (add “TR” suffix to part number)  
WEIGHT: 0.04 grams  
See package dimensions on last page  
•
•
Forward voltage @200 mA: 1.1 volts  
•
•
Solder Temperatures: 260 ºC for 10 s (max)  
Copyright 2003  
Microsemi  
Page 1  
10-31-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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与JAN1N5540CUR-1相关器件

型号 品牌 获取价格 描述 数据表
JAN1N5540CUR-1TR MICROSEMI

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 		Zener Diode, 20V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS
JAN1N5540CURTR MICROSEMI

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 		Zener Diode, 20V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS
JAN1N5540CURTR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540D MICROSEMI

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 		LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
JAN1N5540D-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540D-1TR MICROSEMI

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 		Zener Diode, 20V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS
JAN1N5540DTR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540DUR MICROSEMI

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 		LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
JAN1N5540DUR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540DUR-1TR MICROSEMI

获取价格

 		Zener Diode, 20V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS

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