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JAN1N5540D

更新时间： 2024-11-23 23:05:15
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美高森美 - MICROSEMI 二极管齐纳二极管
页数 文件大小 规格书
2页 107K
描述
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

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JAN1N5540D 数据手册

 浏览型号JAN1N5540D的Datasheet PDF文件第2页 
•
1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV  
PER MIL-PRF-19500/437  
1N5518BUR-1  
thru  
• ZENER DIODE, 500mW  
1N5546BUR-1  
and  
• LEADLESS PACKAGE FOR SURFACE MOUNT  
• LOW REVERSE LEAKAGE CHARACTERISTICS  
• METALLURGICALLY BONDED  
CDLL5518 thru CDLL5546D  
MAXIMUM RATINGS  
Junction and Storage Temperature: -65°C to +125°C  
DC Power Dissipation: 500 mW @ T  
= +125°C  
EC  
Power Derating: 10 mW / °C above T  
= +125°C  
EC  
Forward Voltage @ 200mA: 1.1 volts maximum  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.  
B-C-D  
SUFFIX  
CDI  
TYPE  
NOMINAL  
ZENER  
ZENER  
TEST  
MAX. ZENER  
IMPEDANCE  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
MAXIMUM  
DC ZENER  
REGULATION  
FACTOR  
LOW  
V
Z
NUMBER  
VOLTAGE CURRENT B-C-D SUFFIX  
CURRENT  
CURRENT  
V
@ 1  
ZT  
1
Z
@ 1  
ZT  
l
V
= VOLTS  
1
∆V  
1
Z
ZT  
ZT  
R
R
ZM  
Z
ZL  
(NOTE 1)  
(NOTE 2)  
(NOTE 3)  
(NOTE 4)  
(NOTE 5)  
NON & A-  
SUFFIX  
B-C-D-  
SUFFIX  
VOLTS  
mA  
OHMS  
µ Adc  
mA  
VOLTS  
mA  
MILLIMETERS  
INCHES  
CDLL5518B  
CDLL5519B  
CDLL5520B  
CDLL5521B  
CDLL5522B  
3.3  
3.6  
3.9  
4.3  
4.7  
20  
20  
20  
20  
10  
26  
24  
22  
18  
22  
5.0  
3.0  
1.0  
3.0  
2.0  
0.90  
0.90  
0.90  
1.0  
1.0  
1.0  
1.0  
1.5  
2.0  
115  
105  
98  
88  
81  
0.90  
0.90  
0.85  
0.75  
0.60  
2.0  
2.0  
2.0  
2.0  
1.0  
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
1.5  
G
CDLL5523B  
CDLL5524B  
CDLL5525B  
CDLL5526B  
CDLL5527B  
5.1  
5.6  
6.2  
6.8  
7.5  
5.0  
3.0  
1.0  
1.0  
1.0  
26  
30  
30  
30  
35  
2.0  
2.0  
1.0  
1.0  
0.5  
2.0  
3.0  
4.5  
5.5  
6.0  
2.5  
3.5  
5.0  
6.2  
6.8  
75  
68  
61  
56  
51  
0.65  
0.30  
0.20  
0.10  
0.05  
0.25  
0.25  
0.01  
0.01  
0.01  
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
CDLL5528B  
CDLL5529B  
CDLL5530B  
CDLL5531B  
CDLL5532B  
8.2  
9.1  
10.0  
11.0  
12.0  
1.0  
1.0  
1.0  
1.0  
1.0  
40  
45  
60  
80  
90  
0.5  
0.1  
0.05  
0.05  
0.05  
6.5  
7.0  
8.0  
9.0  
9.5  
7.5  
8.2  
9.1  
9.9  
10.8  
46  
42  
38  
35  
32  
0.05  
0.05  
0.10  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
FIGURE 1  
DESIGN DATA  
CDLL5533B  
CDLL5534B  
CDLL5535B  
CDLL5536B  
CDLL5537B  
13.0  
14.0  
15.0  
16.0  
17.0  
1.0  
1.0  
1.0  
1.0  
1.0  
90  
0.01  
0.01  
0.01  
0.01  
0.01  
10.5  
11.5  
12.5  
13.0  
14.0  
11.7  
12.6  
13.5  
14.4  
15.3  
29  
27  
25  
24  
22  
0.20  
0.20  
0.20  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
100  
100  
100  
100  
CASE: DO-213AA, Hermetically sealed  
glass case. (MELF, SOD-80, LL34)  
CDLL5538B  
CDLL5539B  
CDLL5540B  
CDLL5541B  
CDLL5542B  
18.0  
19.0  
20.0  
22.0  
24.0  
1.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
0.01  
15.0  
16.0  
17.0  
18.0  
20.0  
16.2  
17.1  
18.0  
19.8  
21.6  
21  
20  
19  
17  
16  
0.20  
0.20  
0.20  
0.25  
0.30  
0.01  
0.01  
0.01  
0.01  
0.01  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
):  
OJEC  
100 °C/W maximum at L = 0 inch  
CDLL5543B  
CDLL5544B  
CDLL5545B  
CDLL5546B  
25.0  
28.0  
30.0  
33.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
21.0  
23.0  
24.0  
28.0  
22.4  
25.2  
27.0  
29.7  
15  
14  
13  
12  
0.35  
0.40  
0.45  
0.50  
0.01  
0.01  
0.01  
0.01  
THERMAL IMPEDANCE: (Z  
°C/W maximum  
): 35  
OJX  
NOTE 1  
No Suffix type numbers are +20% with guaranteed limits for only V , l , and V .  
Z R F  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
Units with “A” suffix are +10% with guaranteed limits for V , l , and V . Units with  
Z
R
F
guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units,  
“C” suffix for+2.0% and “D” suffix for +1.0%.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
NOTE 2  
NOTE 3  
Zener voltage is measured with the device junction in thermal equilibrium at an ambient  
temperature of 25°C + 3°C.  
Zener impedance is derived by superimposing on 1  
A 60Hz rms a.c. current equal to  
ZT  
10% of1  
ZT.  
NOTE 4  
NOTE 5  
Reverse leakage currents are measured at V as shown on the table.  
R
∆V is the maximum difference between V at l  
ZT  
and V at l measured  
ZL  
Z
Z
Z
with the device junction in thermal equilibrium.  
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841  
PHONE (978) 620-2600  
FAX (978) 689-0803  
WEBSITE: http://www.microsemi.com  
143  
12

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与JAN1N5540D相关器件

型号 品牌 获取价格 描述 数据表
JAN1N5540D-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540D-1TR MICROSEMI

获取价格

 		Zener Diode, 20V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS
JAN1N5540DTR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540DUR MICROSEMI

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 		LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
JAN1N5540DUR-1 MICROSEMI

获取价格

 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540DUR-1TR MICROSEMI

获取价格

 		Zener Diode, 20V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS
JAN1N5540DURTR MICROSEMI

获取价格

 		Zener Diode, 20V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS
JAN1N5540DURTR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540TR-1 MICROSEMI

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 		Low Voltage Surface Mount 500 mW Avalanche Diodes
JAN1N5540UR MICROSEMI

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 		LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW

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