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JAN1N5314UR

更新时间： 2024-11-14 20:58:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
17页 84K
描述
Current Regulator Diode, 4.7mA I(S), 2.9V V(L), Silicon, DO-213AB, HERMETIC SEALED PACKAGE-2

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JAN1N5314UR 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：DO-213AB包装说明：HERMETIC SEALED PACKAGE-2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.37Is Samacsys：N
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：CURRENT REGULATOR DIODE
最小动态阻抗：235000 ΩJEDEC-95代码：DO-213AB
JESD-30 代码：O-XELF-R2JESD-609代码：e0
最大限制电压：2.9 V元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：ROUND封装形式：LONG FORM
最大功率耗散：0.5 W认证状态：Not Qualified
标称调节电流 (Ireg)：4.7 mA最大重复峰值反向电压：100 V
子类别：Current Regulator Diodes表面贴装：YES
技术：FIELD EFFECT端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
Base Number Matches：1

JAN1N5314UR 数据手册

 浏览型号JAN1N5314UR的Datasheet PDF文件第2页浏览型号JAN1N5314UR的Datasheet PDF文件第3页浏览型号JAN1N5314UR的Datasheet PDF文件第4页浏览型号JAN1N5314UR的Datasheet PDF文件第5页浏览型号JAN1N5314UR的Datasheet PDF文件第6页浏览型号JAN1N5314UR的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 24 September 2003.  
MIL-PRF-19500/463F  
24 June 2003  
SUPERSEDING  
MIL-S-19500/463E  
12 October 1997  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, DIODE, SILICON, CURRENT REGULATOR,  
TYPES 1N5283-1 THROUGH 1N5314-1, AND 1N5283UR-1 THROUGH 1N5314UR-1  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 100 volt, silicon, current regulator diodes.  
Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.  
Two levels of product assurance are provided for each unencapsulated device type.  
1.2 Physical dimensions. See figure 1 (DO-7), figure 2 (DO-213AB), and figure 3 (JANHC and JANKC).  
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.10) and as follows:  
a. P = 500 mW (DO-7) at T = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink  
T
L
at  
L = .375 inch (9.53 mm). (Derate to 0 at +175°C).  
b. P = 500 mW (DO-213AB) at T  
= +125°C. (Derate to 0 at +175°C).  
T
EC  
c. -65°C ≤ T ≤ +175°C; -65°C ≤ T  
≤ +175°C.  
j
STG  
1.4 Primary electrical characteristics. Primary electrical ratings are as shown in maximum test ratings (see 3.10)  
and as follows, (nominally 0.22 mA dc ≤ I ≤ 4.70 mA dc):  
P
a. R  
b. R  
= 250°C/W (maximum) at L = .375 inch (9.53 mm) (DO-7).  
ΘJL  
= 100°C/W (maximum) junction to end-caps (DO-213AB).  
ΘJEC  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this  
specification, whether or not they are listed.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.  
Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
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