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JAN1N4105CUR-1

更新时间： 2024-11-20 18:30:43
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
25页 225K
描述
Zener Diode, 11V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN

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JAN1N4105CUR-1 技术参数

生命周期：Obsolete包装说明：O-LELF-R2
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N其他特性：METALLURGICALLY BONDED
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-213AAJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM极性：UNIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Not Qualified
参考标准：MIL-19500/435F标称参考电压：11 V
表面贴装：YES技术：ZENER
端子形式：WRAP AROUND端子位置：END
最大电压容差：2%工作测试电流：0.25 mA
Base Number Matches：1

JAN1N4105CUR-1 数据手册

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The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 18 August 2007.  
INCH-POUND  
MIL-PRF-19500/435H  
18 May 2007  
SUPERSEDING  
MIL-PRF-19500/435G  
10 November 2005  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES  
1N4099-1 THROUGH 1N4135-1, 1N4614-1 THROUGH 1N4627-1, 1N4099UR-1 THROUGH 1N4135UR-1,  
1N4614UR-1 THROUGH 1N4627UR-1, PLUS C AND D TOLERANCE SUFFIX DEVICES,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage  
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are  
provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for  
each unencapsulated device type (die). For JANHC and JANKC quality levels see 6.5.  
* 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC).  
* 1.3 Maximum ratings Unless otherwise specified TC = 25°C. Maximum ratings are as shown in maximum test  
ratings herein (see 3.8), and as follows:  
a.  
PTL = 500 mW (DO-35) at TL = 50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at  
L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).  
b.  
c.  
P
TEC = 500 mW (DO-213AA) at TEC = 125°C. (Derate to 0 at 175°C). -65°C ≤ TJ ≤ +175°C; -65°C ≤ TSTG  
≤ +175°C.  
P
= 400 mW, T = +55°C. (Derate to 0 at +55°C).  
A
TPCB  
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil.  
Since contact information can change, you may want to verify the currency of this address information using the  
ASSIST Online database at http://assist.daps.dla.mil.  
AMSC N/A  
FSC 5961  
1234567...25

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与JAN1N4105CUR-1相关器件

型号 品牌 获取价格 描述 数据表
JAN1N4105CURTR MICROSEMI

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 		GLASS SURFACE MOUNT 0.5 WATT ZENERS
JAN1N4105CURTR-1 MICROSEMI

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 		GLASS SURFACE MOUNT 0.5 WATT ZENERS
JAN1N4105D MICROSEMI

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 		SILICON 400mA LOW NOISE ZENER DIODES
JAN1N4105D/TR MICROSEMI

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 		Zener Diode, 11V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLAS
JAN1N4105D-1 CDI-DIODE

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 		Zener Diode, 11V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN
JAN1N4105D-1 MICROSEMI

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 		Zener Diode, 11V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN
JAN1N4105D-1/TR MICROSEMI

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 		Zener Diode, 11V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLAS
JAN1N4105DUR MICROSEMI

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 		GLASS SURFACE MOUNT 0.5 WATT ZENERS
JAN1N4105DUR-1 CDI-DIODE

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 		Zener Diode, 11V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA, 2 PIN
JAN1N4105DUR-1 MICROSEMI

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 		SILICON 400mA LOW NOISE ZENER DIODES

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