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JAN1N3821DUR-1 PDF预览

JAN1N3821DUR-1

更新时间： 2024-11-10 14:01:19
品牌 Logo 应用领域
CDI-DIODE 测试二极管
页数 文件大小 规格书
18页 882K
描述
Zener Diode, 3.3V V(Z), 1%, 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN

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JAN1N3821DUR-1 技术参数

生命周期：Obsolete包装说明：DO-213AB, 2 PIN
Reach Compliance Code：unknown风险等级：5.74
其他特性：METALLURGICALLY BONDED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJEDEC-95代码：DO-213AB
JESD-30 代码：O-LELF-R2元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified参考标准：MIL-19500/115K
标称参考电压：3.3 V表面贴装：YES
技术：ZENER端子形式：WRAP AROUND
端子位置：END最大电压容差：1%
工作测试电流：76 mABase Number Matches：1

JAN1N3821DUR-1 数据手册

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INCH-POUND  
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 16 November 2004.  
MIL-PRF-19500/115K  
16 August 2004  
SUPERSEDING  
MIL-PRF-19500/115J  
10 October 1997  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES  
1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,  
1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,  
1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,  
PLUS C- AND D- TOLERANCE SUFFIX,  
JAN, JANTX, JANTXV, AND JANHC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
*
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with  
voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each  
device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.  
1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).  
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8) herein and as follows:  
-55°C ≤ T  
≤ +175°C; -55°C ≤ T  
≤ +175°C.  
STG  
op  
Type  
P
W
1.0 (1)  
1.0 (2)  
T
°C  
+95  
T
°C  
T
L
EC  
DO-13, DO-41  
DO-213AB  
+125  
(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate I to  
Z
0.0 mA dc at T = +175°C).  
L
(2) Derate to 0 at T  
= +175°C.  
EC  
* 1.4 Primary electrical characteristics. Primary electrical characteristic are as shown in primary test ratings (see  
3.8) herein and as follows: 3.3 V dc≤ V ≤ 200 V dc. A and B suffix devices are 5 percent voltage tolerance. C suffix  
z
devices are 2 percent voltage tolerance. D suffix devices are 1 percent voltage tolerance.  
Type  
R
R
(1)  
(2)  
θJEC  
θJL  
°C/W  
°C/W  
DO-13  
80  
DO-41  
50  
DO-213AB  
50  
(1) L = .375 inch (9.53 mm).  
(2) Junction to end-caps.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,  
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at http://www.dodssp.daps.mil.  
AMSC N/A  
FSC 5961  
1234567...18

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