Datasheet > J304RLRA

J304RLRA

更新时间： 2024-02-25 06:06:28

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
38页	454K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, PLASTIC, TO-226AA, 3 PIN

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J304RLRA 数据手册

SEMICONDUCTOR TECHNICAL DATA

N–Channel — Depletion

1 DRAIN

GATE

2 SOURCE

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

MAXIMUM RATINGS

Rating

Drain–Gate Voltage

Symbol

Value

–30

Unit

Vdc

Gate–Source Voltage

Gate Current

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Lead Temperature

(1/16″ from Case for 10 Seconds)

300

°C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 1.0 µAdc, V

G DS

= 0)

Gate Reverse Current

(V = –20 Vdc, V

100

GSS

= 0)

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 1.0 nAdc)

Vdc

GS(off)

–2.0

–6.0

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

DSS

= 15 Vdc, V

= 0)

5.0

—

SMALL–SIGNAL CHARACTERISTICS

Output Admittance

mhos

= 15 Vdc, V

= 0, f = 1.0 kHz)

Forward Transconductance

Re(y

)

= 15 Vdc, V

= 0, f = 1.0 kHz)

4500

7500

REV 1

4–144

Motorola Small–Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7...38

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