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J304-TR1-E3 PDF预览

J304-TR1-E3

更新时间: 2024-02-22 04:24:17
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 45K
描述
Transistor

J304-TR1-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84FET 技术:JUNCTION
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

J304-TR1-E3 数据手册

 浏览型号J304-TR1-E3的Datasheet PDF文件第2页浏览型号J304-TR1-E3的Datasheet PDF文件第3页浏览型号J304-TR1-E3的Datasheet PDF文件第4页浏览型号J304-TR1-E3的Datasheet PDF文件第5页浏览型号J304-TR1-E3的Datasheet PDF文件第6页 
J304/305  
Vishay Siliconix  
N-Channel JFETs  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)  
J304  
J305  
–2 to –6  
–30  
–30  
4.5  
3
5
1
–0.5 to –3  
FEATURES  
BENEFITS  
APPLICATIONS  
D Excellent High Frequency Gain: J304,  
D Wideband High Gain  
D High-Frequency Amplifier/Mixer  
D Oscillator  
Gps 11 dB (typ) @ 400 MHz  
D Very High System Sensitivity  
D High Quality of Amplification  
D Very Low Noise: 3.8 dB (typ) @  
D Sample-and-Hold  
400 MHz  
D High-Speed Switching Capability  
D High Low-Level Signal Amplification  
D Very Low Capacitance Switches  
D Very Low Distortion  
D High ac/dc Switch Off-Isolation  
D High Gain: AV = 60 @ 100 mA  
DESCRIPTION  
The J304/305 n-channel JFETs provide high-performance  
amplification, especially at high-frequency. These products  
are available in tape and reel for automated assembly (see  
Package Information).  
For similar products in TO-236 (SOT-23) packages, see the  
2N/SST5484 series data sheet, or in TO-206AF (TO-72)  
packages, see the 2N/SST4416 series data sheet.  
TO-226AA  
(TO-92)  
1
2
3
S
D
G
Top View  
ABSOLUTE MAXIMUM RATINGS  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30 V  
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70236  
S-04028—Rev. D, 04-Jun-01  
www.vishay.com  
7-1  

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