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J270

更新时间: 2024-11-05 05:40:03
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管
页数 文件大小 规格书
4页 41K
描述
P-Channel JFETs

J270 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.67Is Samacsys:N
FET 技术:JUNCTIONJESD-609代码:e0
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.35 W子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

J270 数据手册

 浏览型号J270的Datasheet PDF文件第2页浏览型号J270的Datasheet PDF文件第3页浏览型号J270的Datasheet PDF文件第4页 
J/SST270 Series  
Vishay Siliconix  
P-Channel JFETs  
J270  
J271  
SST270  
SST271  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)  
J/SST270  
J/SST271  
0.5 to 2.0  
1.5 to 4.5  
30  
30  
6
8
–2  
–6  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low Cutoff Voltage: J270 <2 V D Full Performance from Low-Voltage Power  
D High-Gain, Low-Noise Amplifiers  
Supply: Down to 2 V  
D High Input Impedance  
D Low-Current, Low-Voltage Battery  
D Low Signal Loss/System Error  
Amplifiers  
D Very Low Noise  
D High Gain  
D High System Sensitivity  
D Ultrahigh Input Impedance Pre-Amplifiers  
D High-Quality, Low-Level Signal Amplification D High-Side Switching  
DESCRIPTION  
The J/SST270 series consists of all-purpose amplifiers for  
designs requiring p-channel operation.  
provides surface-mount capability. Both the J and SST series  
are available in tape-and-reel for automated assembly (see  
Packaging Information).  
The TO-226AA (TO-92) plastic package provides a low-cost  
option, while the TO-236 (SOT-23) package  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
3
D
G
S
D
S
1
2
3
G
Top View  
Top View  
SST270 (S0)*  
SST271 (S1)*  
J270  
J271  
*Marking Code for TO-236  
ABSOLUTE MAXIMUM RATINGS  
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70258  
S-04233—Rev. D, 02-Jul-01  
www.vishay.com  
8-1  

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